74HCT157U by NXP Semiconductors | Logic ICs

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	74HCT157U
Description	MULTIPLEXER; Temperature Grade: AUTOMOTIVE; Terminal Form: NO LEAD; Package Code: DIE; Package Shape: UNSPECIFIED; Minimum Supply Voltage (Vsup): 4.5 V;
Datasheet	74HCT157U Datasheet
In Stock	92

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
No. of Inputs:	2
Minimum Supply Voltage (Vsup):	4.5 V
Surface Mount:	YES
No. of Outputs:	1
Terminal Position:	UPPER
Package Style (Meter):	UNCASED CHIP
Technology:	CMOS
JESD-30 Code:	X-XUUC-N
Package Shape:	UNSPECIFIED
Terminal Form:	NO LEAD
Maximum Operating Temperature:	125 Cel
Package Code:	DIE
Moisture Sensitivity Level (MSL):	NOT APPLICABLE
Output Polarity:	TRUE
Logic IC Type:	MULTIPLEXER
Minimum Operating Temperature:	-40 Cel
No. of Functions:	4
Qualification:	Not Qualified
Propagation Delay (tpd):	41 ns
Nominal Supply Voltage / Vsup (V):	5
Family:	HCT
Peak Reflow Temperature (C):	NOT SPECIFIED
Temperature Grade:	AUTOMOTIVE
Maximum Supply Voltage (Vsup):	5.5 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
92	-	-

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FDD5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A IDM and 0.1 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 175°C. The PLASTIC/EPOXY package with GULL WING terminals ensures efficient heat dissipation and reliable performance.

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Form: GULL WING; Terminal Position: DUAL;