933076440113 by NXP Semiconductors | Diodes

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	933076440113
Description	RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ELLIPTICAL;
Datasheet	933076440113 Datasheet
In Stock	3,848

NAME	DESCRIPTION
Package Body Material:	GLASS
Maximum Forward Voltage (VF):	1 V
Config:	SINGLE
Diode Type:	RECTIFIER DIODE
Maximum Output Current:	.8 A
Surface Mount:	NO
Maximum Reverse Current:	1 uA
No. of Terminals:	2
Terminal Position:	AXIAL
Package Style (Meter):	LONG FORM
Technology:	AVALANCHE
JESD-30 Code:	E-LALF-W2
Minimum Breakdown Voltage:	225 V
No. of Elements:	1
Package Shape:	ELLIPTICAL
Terminal Form:	WIRE
Maximum Operating Temperature:	175 Cel
Case Connection:	ISOLATED
No. of Phases:	1
Reverse Test Voltage:	200 V
Maximum Repetitive Peak Reverse Voltage:	200 V
Minimum Operating Temperature:	-65 Cel
Maximum Non Repetitive Peak Forward Current:	50 A
Diode Element Material:	SILICON
Qualification:	Not Qualified
Additional Features:	LOW LEAKAGE CURRENT
Reference Standard:	IEC 134
Application:	GENERAL PURPOSE
Maximum Reverse Recovery Time:	3 us

Pricing (USD)

Qty.	Unit Price	Ext. Price
3,848	-	-

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BSS138LT3G by Onsemi is a N-CHANNEL FET with a min DS breakdown voltage of 50V. It is used for switching applications and has a max drain current of 0.2A and max drain-source on resistance of 3.5 ohm.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 7.5 ohm; Maximum Drain Current (Abs) (ID): .115 A;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Operating Mode: ENHANCEMENT MODE;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

BSS123LT1G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A drain current, and 6 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.225W. It comes in a small outline package with gull wing terminals and can withstand temperatures from -55 to 150°C.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 50 V; Qualification: Not Qualified;