NXP Semiconductors - 933582620112

  1. Home
  2. NXP Semiconductors - 933582620112
933582620112 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number 933582620112
Description NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 2500 MHz; Maximum Collector Current (IC): 2 A; No. of Terminals: 8;
Datasheet 933582620112 Datasheet
In Stock3,951
NAME DESCRIPTION
Nominal Transition Frequency (fT): 2500 MHz
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Collector Current (IC): 2 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: COMMON EMITTER, 2 ELEMENTS
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
No. of Terminals: 8
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 27 V
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-CDFM-F8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Additional Features: HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Collector-Base Capacitance: 30 pF
Case Connection: ISOLATED
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,951 - -

Popular Products

Category Top Products

AM0608-200 by STMicroelectronics

AM0608-200

STMicroelectronics

STMicroelectronics' AM0608-200 is an NPN RF BJT with 8.7 dB min power gain, ideal for amplifier applications in the ultra-high frequency band. With a max power dissipation of 875 W and operating temperature up to 250 °C, it features a ceramic-metal-sealed co-fired package body and dual terminal position for efficient performance.
BLW76 by NXP Semiconductors

BLW76

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 315 MHz; Maximum Power Dissipation (Abs): 140 W; Maximum Collector Current (IC): 8 A;
AM81214-006 by STMicroelectronics

AM81214-006

STMicroelectronics

STMicroelectronics AM81214-006 is an NPN RF BJT transistor with a max power dissipation of 16.7W and min hFE of 15, ideal for L Band switching applications. It has a max IC of 0.82A, operates up to 250 °C, and comes in a ceramic-metal package with dual terminals for flange mount connection.
2N3375 by NXP Semiconductors

2N3375

NXP Semiconductors

2N3375 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 11.6 W, operates up to 200 °C, and supports frequencies up to 500 MHz. Ideal for ultra-high frequency circuits in metal packages.
BLV13 by NXP Semiconductors

BLV13

NXP Semiconductors

BLV13 by NXP Semiconductors is an NPN RF power BJT designed for amplifiers, featuring a min power gain of 8.5 dB and a nominal transition frequency of 1650 MHz. It operates at max temperatures of 200 °C with a collector current up to 8 A. Its robust ceramic-metal sealed package ensures reliability in very high-frequency applications.
AM83135-050 by STMicroelectronics

AM83135-050

STMicroelectronics

STMicroelectronics AM83135-050 is a NPN RF BJT transistor with 8A IC, 312W power dissipation, and S Band frequency. Ideal for switching applications in high-power circuits. Features ceramic-metal package, flat terminals, and flange mount style for efficient heat dissipation at up to 250 °C operating temperature.
LFE18500X by NXP Semiconductors

LFE18500X

NXP Semiconductors

LFE18500X by NXP Semiconductors is a high-performance NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 120W, operates up to 200 °C, and offers a min power gain of 7 dB. Ideal for L-band frequency use in compact designs.
934004150115 by NXP Semiconductors

934004150115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON; Terminal Finish: TIN;
MRF454 by Tyco Electronics M/a-com

MRF454

Tyco Electronics M/a-com

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 20 A; Transistor Application: AMPLIFIER; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
LAE4002S by NXP Semiconductors

LAE4002S

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .09 A; Additional Features: HIGH RELIABILITY, DIFFUSED EMITTER BALLAST RESISTOR; JESD-30 Code: S-CQMW-F4;
LTE42005S by NXP Semiconductors

LTE42005S

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 4 W; Maximum Collector Current (IC): .25 A; Highest Frequency Band: C BAND;
BLV857 by NXP Semiconductors

BLV857

NXP Semiconductors

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 7.4 A; JESD-30 Code: R-CDFM-F4;
BLS2731-50,114 by NXP Semiconductors

BLS2731-50,114

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; Qualification: Not Qualified; Transistor Application: AMPLIFIER;
2SC5023 by Renesas Electronics

2SC5023

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1000 MHz; Maximum Collector Current (IC): .2 A; JESD-30 Code: R-PSFM-T3;
2SC2879 by Asi Semiconductor

2SC2879

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 25 A;
2SC2102 by Toshiba

2SC2102

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 3.5 A; Terminal Position: RADIAL; Package Shape: ROUND;
AT-64020 by Broadcom

AT-64020

Broadcom

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .2 A; JESD-609 Code: e4; Highest Frequency Band: S BAND;
BLV57 by NXP Semiconductors

BLV57

NXP Semiconductors

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 2500 MHz; Maximum Power Dissipation (Abs): 77 W; Maximum Collector Current (IC): 2 A;
2SC2638 by Toshiba

2SC2638

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): 2 A; Maximum Power Dissipation Ambient: 15 W;
MRF426 by M/a-com Technology Solutions

MRF426

M/a-com Technology Solutions

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 3 A; Transistor Application: AMPLIFIER; Terminal Form: FLAT;