NXP Semiconductors - 934019200112

HMC788ALP2ETR by Analog Devices is a wide band low power RF amplifier with 9 dB gain, suitable for frequencies ranging from 10 MHz to 10 GHz. It can handle a max input power of 20 dBm and operates in temperatures b/w -40°C to 85°C. Ideal for applications requiring RF amplification in various electronic systems.

Qorvo's SBF-4089Z is a GAAS RF amplifier with 13.2 dB gain, operating from 0 to 500 MHz. It has a max input power of 19 dBm and operates at temperatures ranging from -40 to 85°C. Ideal for wideband low-power applications, it features a surface-mount package with matte tin terminals.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 150 mA;

Analog Devices' HMC636ST89ETR is a wide band low power RF amplifier with 5dB gain, operating from 200MHz to 4GHz. It has a max input power of 16dBm and operates on a 5V supply. Ideal for applications requiring surface mount construction in RF & microwave systems.

Qorvo's QPA2735TR7X is a GAAS RF amplifier with 26dB gain, operating from 13.75-18 GHz. It has a max input power of 20 dBm and operates on a 3.5V supply, ideal for wideband low-power applications in RF & microwave systems. The component features surface mounting and a plastic/epoxy package body material.

Analog Devices' HMC634LC4TR-R5 is a GAAS RF amplifier with 24 terminals, operating at -40 to 85°C. It requires a 5V power supply and features a surface-mount package for applications in RF and microwave systems.

Broadcom's MGA-53543-BLKG is a wide band low power RF amplifier with 14 dB gain. Operating from 50 MHz to 6 GHz, it handles up to 13 dBm CW input power and has a VSWR of 2. Ideal for RF applications requiring a compact component with a characteristic impedance of 50 ohms.

NARROW BAND HIGH POWER;

MAAP-010168-000000 by M/a-com Technology Solutions is a wide band high power RF module with 19 dB gain, operating from 500 MHz to 3000 MHz. It can handle up to 24 dBm CW input power and operates in temperatures ranging from -40°C to 85°C. Ideal for RF & Microwave applications requiring high power amplification.

Analog Devices' HMC8500PM5ETR is a GaN wide band high power RF amplifier with 12 dB gain, operating from 10 MHz to 2800 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for applications requiring high power amplification in RF and microwave systems. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation at temperatures ranging from -40°C to 85°C.

MAX2839ETN+TD by Maxim Integrated is a narrow band low power RF amplifier with 15 dBm CW input power. Operating from -40 to 85°C, it covers 2300-2700 MHz range. Ideal for RF applications requiring high performance in a compact component package.

WIDE BAND MEDIUM POWER; Terminal Finish: Matte Tin (Sn); Maximum Operating Frequency: 6000 MHz; Construction: COMPONENT; Minimum Operating Frequency: 0 MHz; Minimum Operating Temperature: -40 Cel;

Qorvo's RF5110G is a GAAS technology narrow band high power amplifier with 32 dB gain. It operates b/w 880-915 MHz, handles up to 13 dBm CW input power, and has a VSWR of 10. Suitable for RF applications requiring high power amplification in the frequency range.

WIDE BAND HIGH POWER; Maximum Operating Frequency: 18000 MHz; JESD-609 Code: e3/e4; Terminal Finish: MATTE TIN/GOLD; Minimum Operating Frequency: 0 MHz; Maximum Input Power (CW): 43 dBm;

Analog Devices' HMC8500PM5E is a GAN RF amplifier with 12dB gain, operating from 10MHz to 2800MHz. It has a max input power of 33dBm and VSWR of 6, suitable for wideband high-power applications. The component features a plastic/epoxy package, surface mounting, and operates at temperatures ranging from -40°C to 85°C.

Analog Devices' HMC752LC4TR is a GAAS RF amplifier with 24 terminals, operating from -40 to 85°C. It offers wideband low power performance at 3V supply, ideal for surface mount applications in RF and microwave systems.

Qorvo's SBF4089ZSR is a GAAS RF amplifier with 13.2 dB gain, operating from 0-500 MHz. It has a max input power of 15 dBm and operates at temperatures ranging from -40 to 85°C. Ideal for wideband low-power applications, it features a surface-mount package with 3 terminals and requires a 4.9V power supply.

The NXP Semiconductors MW7IC930NR1 is a MOS RF amplifier with 33 dB gain, operating b/w 920-960 MHz. It has a max input power of 20 dBm and VSWR of 10, suitable for narrowband high-power applications at 28V supply voltage.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Construction: COMPONENT;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: TSSOP6,.08;