NXP Semiconductors - 934041270112

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 24 dBm; Minimum Operating Frequency: 0 MHz; Construction: COMPONENT; Gain: 19 dB;

Qorvo's RF3827SR is a GaAs wide band medium power amplifier with 16 terminals, operating b/w -40°C to 85°C. It requires an 8V power supply and draws a max current of 130mA. Ideal for surface mount applications in RF & microwave systems.

Broadcom's MGA-31689-TR1G is a GAAS RF amplifier with 16.6 dB gain, operating from 1500 to 3000 MHz. It has a max input power of 15 dBm and requires a 5V power supply. Ideal for wideband medium-power applications due to its surface-mount construction and characteristic impedance of 50 ohms.

WIDE BAND LOW POWER; Minimum Operating Temperature: -40 Cel; Maximum Operating Frequency: 20000 MHz; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 2000 MHz; Construction: COMPONENT;

TRF37C73IDSGT by Texas Instruments is a wide band low power RF amplifier with 18dB gain, operating from 1MHz to 6GHz. It has a max input power of 10dBm and operates on a 3.3V supply, suitable for applications requiring high frequency amplification in RF systems. The component comes in an 8-terminal plastic/epoxy package for surface mounting, making it ideal for various RF and microwave applications.

Broadcom's MGA-23003-BLKG is a RF & Microwave Amplifier with 32 dB Gain, operating b/w 3300-3800 MHz. It has a Max Input Power of 15 dBm and operates on a 3.3V power supply. Ideal for narrowband medium power applications due to its GaAs technology and surface mounting feature.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 28; Package Body Material: PLASTIC/EPOXY; Gain: 14 dB; Terminal Finish: Matte Tin (Sn);

MAX2643EXT-T by Maxim Integrated is a wide band low power RF amplifier with 14.5 dB gain, operating from 800-1000 MHz. It can handle up to 5 dBm CW input power and operates in temperatures ranging from -40°C to 85°C. Ideal for RF and microwave applications requiring high gain amplification within specified frequency range.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: CERAMIC; Technology: GAAS; Minimum Operating Temperature: -40 Cel;

Analog Devices' HMC636ST89E is a GAAS technology RF amplifier with 5dB gain, operating from 200MHz to 4GHz. It has a max input power of 16dBm and operates on a 5V power supply. Ideal for wideband low-power applications requiring surface mounting in temperatures ranging from -40°C to 85°C.

Broadcom's MGA-30789-BLKG is a wide band medium power RF amplifier with 8 dB gain. It operates from 2-6 GHz, handling up to 24 dBm CW input power. This surface mount component is ideal for RF and microwave applications requiring high performance in plastic/epoxy package.

Qorvo's TGA2958-SM is a GAN technology RF amplifier with 25 dB gain, operating from 13-18 GHz. It has a max input power of 20 dBm and VSWR of 3, suitable for wideband high-power applications in RF & microwave systems. The component features surface mounting and requires -2.7 to 20V supply voltage at 70mA max current.

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: CERAMIC; Technology: BIPOLAR; Maximum Operating Temperature: 85 Cel;

WIDE BAND LOW POWER;

The NXP Semiconductors BGU7005,115 is a RF & Microwave Amplifier with 14 dB gain and 50 ohm impedance. Operating b/w 1559-1610 MHz, it has a max input power of 0 dBm. Ideal for narrow band low power applications, this component is surface mountable and operates in temperatures ranging from -40 to 85 °C.

Analog Devices' HMC8411LP2FETR is a wide band low power RF amplifier with 11 dB gain and 20 dBm max input power. Operating from -40 to 85°C, it covers frequencies from 10 MHz to 10 GHz. Ideal for RF and microwave applications requiring high performance in a compact form factor.

Analog Devices' HMC1114PM5ETR is a GaN wide band high power RF amplifier with 31 dB gain, operating from 2.7 GHz to 3.8 GHz. It has a max input power of 18 dBm and VSWR of 6, suitable for applications requiring high power amplification in the RF & Microwave field. The component features a surface mount package body material made of plastic/epoxy, with a max supply current of 150 mA at 28V.

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Terminal Finish: Matte Tin (Sn); Maximum Operating Temperature: 85 Cel;

Qorvo's QPA9121SR is a GAAS RF amplifier with 24dB gain, operating from 2300-5000MHz. It has a max input power of 10dBm and VSWR of 2, suitable for wideband medium power applications. With a compact surface mount package and low supply current of 130mA at 5V, it offers high performance in RF & microwave systems.

WIDE BAND LOW POWER; Maximum Operating Temperature: 50 Cel; Maximum Input Power (CW): 13 dBm; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 250 MHz; Minimum Operating Frequency: 10 MHz;