NXP Semiconductors - 934042750112

SKY65111-348LF by Skyworks Solutions is a narrow band medium power RF amplifier with 39.5 dB gain, operating from 600 MHz to 1100 MHz. It has a max input power of 10 dBm and VSWR of 8, suitable for applications requiring high-frequency amplification in the RF & Microwave domain. The component is designed for surface mount installation and operates within a temperature range of -40°C to 85°C.

Broadcom's MGA-81563-BLK is a GAAS RF amplifier with 10.5 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 13 dBm and VSWR of 2, suitable for wideband low-power applications in temperatures ranging from -40°C to 85°C. The component features surface mounting and requires a 3V power supply with a max current draw of 51 mA.

WIDE BAND LOW POWER; Terminal Finish: TIN; JESD-609 Code: e3;

ADPA7006AEHZ-R7 by Analog Devices is a wide band medium power RF amplifier with 20 dB gain, operating from 18-44 GHz. It has a max input power of 20 dBm and operates on a 5V power supply. Ideal for applications requiring high-frequency amplification in RF & microwave systems.

The NXP Semiconductors MW7IC2220NR1 is a MOS RF amplifier with 29 dB gain, operating b/w 2-2.2 GHz. It has a max input power of 20 dBm and VSWR of 5, suitable for narrowband high-power applications in the RF & microwave field. The component is designed for a max temperature of 150°C and operates on a 28V supply.

NARROW BAND MEDIUM POWER; Maximum Input Power (CW): 5 dBm; Additional Features: HIGH RELIABILITY; Maximum Operating Frequency: 2484 MHz; Gain: 29 dB; Maximum Operating Temperature: 85 Cel;

Broadcom's MGA-62563-TR1G is a GAAS RF amplifier with 20.4 dB gain, operating from 100 MHz to 3 GHz. It has a max input power of 21 dBm and VSWR of 2, suitable for wideband low-power applications in RF and microwave systems. The component features a plastic/epoxy package, surface mounting, and requires 3-5V power supply with a max current draw of 77 mA.

The Qorvo TQP3M9018 is a wide band medium power RF amplifier with 19 dB gain and 50 ohm impedance. It operates from 50 MHz to 4000 MHz, handling up to 23 dBm CW input power. This component is ideal for applications requiring high frequency amplification in plastic/epoxy packages.

Broadcom's MGA-61563-TR1G is a GAAS RF amplifier with 6.9 dB gain, operating from 100 MHz to 6000 MHz. It has a max input power of 18 dBm and VSWR of 2, suitable for wideband low-power applications in RF and microwave systems. The component features a plastic/epoxy package, matte tin terminals, and operates on 3-5V with a supply current of 48 mA.

WIDE BAND LOW POWER; Maximum Operating Frequency: 250 MHz; Construction: COMPONENT; Minimum Operating Frequency: 10 MHz; Additional Features: LOW NOISE; Gain: 6.5 dB;

TQP7M9102 by Qorvo is a wide band medium power RF amplifier with 15 dB gain, operating from 400 MHz to 4000 MHz. It can handle up to 27 dBm CW input power and has a characteristic impedance of 50 ohm. Ideal for applications requiring high frequency amplification in environments ranging from -40°C to 85°C.

Mini-circuits ERA-3SM+ is a wideband low power RF amplifier with 15.4 dB gain and 50 ohm impedance. It operates from 0 to 3000 MHz, handling up to 13 dBm CW input power. Ideal for surface mount applications in RF and microwave systems, it has a compact plastic/epoxy package and requires only a 3V supply.

XP1039-QJ-0G00 by M/a-com Technology Solutions is a wide band high power RF & microwave amplifier with a gain of 15.5 dB. It operates in the frequency range of 5600 MHz to 7100 MHz and can handle a max input power of 25 dBm. This component is suitable for applications requiring high power amplification in RF and microwave systems.

HMC3653LP3BE by Analog Devices is a wide band low power RF amplifier with a gain of 12 dB. It operates b/w 7-15 GHz, handling up to 12 dBm CW input power. Ideal for RF applications requiring high performance in temperatures ranging from -40°C to 85°C.

WIDE BAND HIGH POWER;

HMC409LP4ETR by Analog Devices is a RF amplifier with 28 dB gain, operating frequency range of 3.3-3.8 GHz, and max input power of 10 dBm. It is designed for narrowband medium power applications in RF & microwave systems requiring a characteristic impedance of 50 ohms. The component features a surface mount package body material made of plastic/epoxy, suitable for temperatures ranging from -40 to 85°C.

NARROW BAND LOW POWER; Terminal Finish: MATTE TIN; JESD-609 Code: e3;

Analog Devices' MAX2659ELT+T is a BICMOS RF amplifier with 1.8/3V supplies, 6 terminals, and 5.6mA max supply current. It operates b/w -40°C to 85°C, features gold nickel terminal finish, and is ideal for surface mount applications in RF & microwave circuits.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: TO-243;

Qorvo's CMD245C4 is a wide band low power RF amplifier with 14 dB gain, operating from 6-18 GHz. It can handle up to 17 dBm CW input power and has a temperature range of -55 to +85°C. Ideal for RF & microwave applications requiring high performance in compact designs.