NXP Semiconductors - 934056832127

934056832127 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 934056832127
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Avalanche Energy Rating (EAS): 1100 mJ; Package Body Material: PLASTIC/EPOXY;
Datasheet 934056832127 Datasheet
In Stock915
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 75 A
Maximum Pulsed Drain Current (IDM): 616 A
Surface Mount: NO
No. of Terminals: 3
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0067 ohm
Avalanche Energy Rating (EAS): 1100 mJ
JEDEC-95 Code: TO-262AA
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 55 V
Qualification: Not Qualified
Peak Reflow Temperature (C): NOT SPECIFIED
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