NXP Semiconductors - 934057089118

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934057089118 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 934057089118
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Operating Mode: ENHANCEMENT MODE; Maximum Drain-Source On Resistance: .003 ohm;
Datasheet 934057089118 Datasheet
In Stock1,233
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 2300 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 75 A
Maximum Pulsed Drain Current (IDM): 950 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 30 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: LOGIC LEVEL COMPATIBLE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .003 ohm
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