NXP Semiconductors - 934057314115

  1. Home
  2. NXP Semiconductors - 934057314115
934057314115 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number 934057314115
Description NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): 1.35 A; No. of Terminals: 6;
Datasheet 934057314115 Datasheet
In Stock3,197
NAME DESCRIPTION
Nominal Transition Frequency (fT): 150 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 1.35 A
Configuration: SEPARATE, 2 ELEMENTS
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: NPN AND PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 200
No. of Terminals: 6
Maximum Collector-Emitter Voltage: 40 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Reference Standard: IEC-60134
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,197 - -

Popular Products

Category Top Products

BC847BM,315 by NXP Semiconductors

BC847BM,315

NXP Semiconductors

BC847BM,315 by NXP Semiconductors is a NPN BJT transistor with 45V VCEO, 0.1A IC, and 200 hFE. Ideal for switching applications, it operates at up to 150°C and has a transition frequency of 100MHz. This chip carrier package features a plastic/epoxy body and tin finish.
MMBT2907A by Comchip Technology

MMBT2907A

Comchip Technology

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A;
BC817-25 by NXP Semiconductors

BC817-25

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .5 A;
JANTX2N2222A by Semicoa

JANTX2N2222A

Semicoa

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC547CG by Onsemi

BC547CG

Onsemi

BC547CG by Onsemi is a NPN BJT with 3 terminals. It has a max power dissipation of 0.625W, hFE of 420, and fT of 300MHz. Ideal for amplifier applications due to its max collector-emitter voltage of 45V and max collector current of 0.1A.
BCP56-16,115 by NXP Semiconductors

BCP56-16,115

NXP Semiconductors

BCP56-16,115 by NXP is a NPN BJT transistor with 1A IC, 80V VCE, and 180MHz fT. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and 150°C max operating temp.
2N2907A by Diotec Semiconductor Ag

2N2907A

Diotec Semiconductor Ag

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; JESD-609 Code: e3;
MMBT2222AM3T5G by Onsemi

MMBT2222AM3T5G

Onsemi

MMBT2222AM3T5G by Onsemi is a NPN BJT transistor with 40V VCEO, 0.6A IC, and 300MHz fT. Ideal for amplifier applications, it comes in a small outline package with matte tin finish and operates up to 150°C.
2N2907A by Good-ark Electronics

2N2907A

Good-ark Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
SMBTA06E6327HTSA1 by Infineon Technologies

SMBTA06E6327HTSA1

Infineon Technologies

Infineon Technologies' SMBTA06E6327HTSA1 is a NPN BJT transistor with hFE of 100, VCE of 80V, and IC of 0.5A. Ideal for amplifier applications, it operates up to 150°C with a transition frequency of 100MHz. This surface-mount device in a small outline package suits compact designs.
BC547C by Microsemi

BC547C

Microsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .1 A; Terminal Form: THROUGH-HOLE; Package Shape: ROUND;
MMBT2907A by Microsemi

MMBT2907A

Microsemi

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .01 A;
2N2222A by Crystalonics

2N2222A

Crystalonics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC547C by Continental Device India

BC547C

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
BC817-25 by Itt Semiconductor

BC817-25

Itt Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Terminal Form: GULL WING; Maximum Collector-Emitter Voltage: 45 V;
MMBT3906VL by Nexperia

MMBT3906VL

Nexperia

Nexperia's MMBT3906VL is a PNP BJT transistor with hFE of 30, VCEO of 40V, and ton of 70ns. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and high transition frequency of 250MHz.
BC547C by Secos

BC547C

Secos

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 45 V;
MMBT2907A by Good-ark Electronics

MMBT2907A

Good-ark Electronics

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Maximum Turn Off Time (toff): 285 ns;
BC807-40W-7 by Diodes Incorporated

BC807-40W-7

Diodes Incorporated

Diodes Inc. BC807-40W-7 is a PNP BJT transistor with 170 min hFE, 45V VCEO, and 100MHz fT. Ideal for switching applications in small outline packages with Gull Wing terminals. Operates up to 150°C with 0.5A IC and 0.2W power dissipation.
2N2222AUB by M/a-com Technology Solutions

2N2222AUB

M/a-com Technology Solutions

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; JESD-30 Code: R-CDSO-N3; Transistor Element Material: SILICON;