NXP Semiconductors - 934057692118

  1. Home
  2. NXP Semiconductors - 934057692118
934057692118 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number 934057692118
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 680 mJ; Terminal Position: SINGLE; Package Style (Meter): SMALL OUTLINE;
Datasheet 934057692118 Datasheet
In Stock1,418
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 680 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 75 A
Maximum Pulsed Drain Current (IDM): 582 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 55 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .006 ohm
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,418 - -

Popular Products

Category Top Products

BS170 by Philips Semiconductors

BS170

Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; JESD-609 Code: e0; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FDT434P by Onsemi

FDT434P

Onsemi

FDT434P by Onsemi is a P-CHANNEL Power FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 6A Drain Current, 0.05 ohm On Resistance, and operates in ENHANCEMENT MODE. With a max power dissipation of 3W and operating temperature up to 150°C, it's suitable for various electronic designs.
PSMN5R5-60YS,115 by NXP Semiconductors

PSMN5R5-60YS,115

NXP Semiconductors

The NXP Semiconductors PSMN5R5-60YS,115 is a single N-channel power FET with 100A max drain current and 130W max power dissipation. Ideal for applications requiring high-power handling in enhancement mode operation, such as industrial motor control and power supplies.
2N7002 by Sinyork

2N7002

Sinyork

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 85 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
FDS6982AS_NL by Fairchild Semiconductor

FDS6982AS_NL

Fairchild Semiconductor

Fairchild Semiconductor's FDS6982AS_NL is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 8.6A Max Drain Current. Ideal for SWITCHING applications, it features a PLASTIC/EPOXY package, GULL WING terminals, and operates in ENHANCEMENT MODE up to 150°C.
BSC093N15NS5ATMA1 by Infineon Technologies

BSC093N15NS5ATMA1

Infineon Technologies

Infineon BSC093N15NS5ATMA1 is a N-CHANNEL FET with 150V DS breakdown voltage, 0.0093 ohm RDS(on), and 348A IDM. Ideal for switching applications due to its built-in diode, it operates in enhancement mode and has an EAS of 130mJ. The transistor's small outline package makes it suitable for surface mount designs.
IRF3415STRLPBF by Infineon Technologies

IRF3415STRLPBF

Infineon Technologies

IRF3415STRLPBF by Infineon is a N-CHANNEL FET with 150V DS Breakdown Voltage and 43A Max Drain Current. It is used for SWITCHING applications, featuring a built-in DIODE, 0.042 ohm Max RDS(on), and 150A IDM. The transistor operates in ENHANCEMENT MODE, has a GULL WING terminal form, and comes in a SMALL OUTLINE package style.
IRF7342TRPBF by International Rectifier

IRF7342TRPBF

International Rectifier

P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Form: GULL WING; Moisture Sensitivity Level (MSL): 1;
IRFR3710ZTRPBF by Infineon Technologies

IRFR3710ZTRPBF

Infineon Technologies

IRFR3710ZTRPBF by Infineon is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 220A and EAS of 150mJ, operating in ENHANCEMENT MODE. With a compact RECTANGULAR package and GULL WING terminals, it offers high performance in small outline designs at up to 175°C.
BSZ100N06LS3GXT by Infineon Technologies

BSZ100N06LS3GXT

Infineon Technologies

Infineon's BSZ100N06LS3GXT is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 80A IDM, 55mJ EAS, and 0.0179 ohm RDS(ON). Operating from -55 to 150 °C, it has a max power dissipation of 50W in a small outline package.
IRLML6401TR by International Rectifier

IRLML6401TR

International Rectifier

IRLML6401TR by International Rectifier is a P-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features 34A IDM, 33mJ EAS, and 0.05 ohm RDS(ON). With ENHANCEMENT MODE operation and GULL WING terminals, it offers efficient performance in a SMALL OUTLINE package.
BSZ097N04LSGATMA1 by Infineon Technologies

BSZ097N04LSGATMA1

Infineon Technologies

Infineon BSZ097N04LSGATMA1 is a N-CHANNEL FET with 40V DS breakdown voltage, ideal for SWITCHING applications. Features include 160A IDM, 0.0142 ohm RDS(on), and 20mJ EAS rating. Operates in ENHANCEMENT MODE up to 175°C, with PLASTIC/EPOXY package and DUAL terminal position.
FDD4685_F085 by Fairchild Semiconductor

FDD4685_F085

Fairchild Semiconductor

Fairchild Semiconductor's FDD4685_F085 is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 100A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, -55 to 175 °C operating temp range, and 0.027 ohm Drain-Source On Resistance.
SQJ459EP-T1_GE3 by Vishay Intertechnology

SQJ459EP-T1_GE3

Vishay Intertechnology

The Vishay Intertechnology SQJ459EP-T1_GE3 is a P-CHANNEL FET with 60V DS breakdown voltage and 200A IDM. Ideal for power applications, it features a built-in diode, 0.018 ohm RDS(on), and 80mJ EAS rating. Suitable for enhancement mode operation in various electronic systems requiring high current handling capabilities.
AUIRF3205Z by International Rectifier

AUIRF3205Z

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 170 W; Maximum Operating Temperature: 175 Cel; Maximum Pulsed Drain Current (IDM): 440 A;
FDMS86163P by Fairchild Semiconductor

FDMS86163P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104 W; JESD-609 Code: e3; Minimum DS Breakdown Voltage: 100 V;
IRF640 by Philips Semiconductors

IRF640

Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Drain Current (Abs) (ID): 18 A; JESD-609 Code: e3;
IRF7401TRPBF by Infineon Technologies

IRF7401TRPBF

Infineon Technologies

Infineon's IRF7401TRPBF is an N-channel FET with a 20V breakdown voltage and 8.7A max drain current. Ideal for switching applications, it features a built-in diode, 0.022 ohm on-resistance, and can handle up to 35A pulsed drain current in enhancement mode operation.
BSC016N06NSTATMA1 by Infineon Technologies

BSC016N06NSTATMA1

Infineon Technologies

Infineon's BSC016N06NSTATMA1 is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 400A IDM, 0.0016 ohm RDS(on), and 380mJ EAS. Its METAL-OXIDE SEMICONDUCTOR technology and DUAL terminal position make it suitable for high-power operations in various electronic devices.
PSMN040-100MSEX by NXP Semiconductors

PSMN040-100MSEX

NXP Semiconductors

PSMN040-100MSEX by NXP Semiconductors is a single-channel N-CHANNEL power FET with a max drain current of 30A and max power dissipation of 91W. It operates in enhancement mode and is suitable for applications requiring high power and temperature resistance.