Image shown is a representation only.
| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | 934057745115 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR; No. of Elements: 1; |
| Datasheet | 934057745115 Datasheet |
| In Stock | 4,821 |
| NAME | DESCRIPTION |
|---|---|
| Avalanche Energy Rating (EAS): | 115 mJ |
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 67 A |
| JEDEC-95 Code: | MO-235AA |
| Maximum Pulsed Drain Current (IDM): | 268 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| No. of Terminals: | 4 |
| Minimum DS Breakdown Voltage: | 30 V |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-G4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .0132 ohm |









