NXP Semiconductors - 934059264115

SMBT2222AE6327HTSA1 by Infineon is a NPN BJT transistor with 40V VCEO, 0.6A IC, and 300MHz fT. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mount assembly. Operating up to 150°C, it offers fast turn-on/off times of 35ns/285ns.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Maximum VCEsat: .7 V;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;

NXP Semiconductors' BC817-40,235 is a NPN BJT transistor for switching applications. With VCEsat of 0.7V and hFE of 250, it can handle IC up to 0.5A. Operating at 150°C max temp, it's ideal for small outline packages in surface mount configurations.

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;

BC817-40-7-F by Diodes Inc. is a NPN BJT transistor with 170 min hFE, 0.5A IC, and 45V VCE. Ideal for switching applications, it has a max power dissipation of 0.31W and operates up to 150°C. Its small outline package with gull wing terminals makes it suitable for surface mount designs.

MMBTA42LT1G by Onsemi is a NPN BJT transistor with 300V VCEO, 0.5A IC, and 50MHz fT. Ideal for small signal applications in electronics due to its high transition frequency and low power dissipation of 0.3W. Its compact rectangular package makes it suitable for surface mount designs requiring a single configuration.

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;

Infineon Technologies' SMBTA06E6327HTSA1 is a NPN BJT transistor with hFE of 100, VCE of 80V, and IC of 0.5A. Ideal for amplifier applications, it operates up to 150°C with a transition frequency of 100MHz. This surface-mount device in a small outline package suits compact designs.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .5 A;

BC817-25W-7 by Diodes Inc. is a NPN BJT transistor with 3 terminals, suitable for switching applications. It has a max collector-emitter voltage of 45V, max collector current of 0.5A, and min DC current gain of 100. With a package style of small outline and peak reflow temp of 260°C, it's ideal for compact electronic devices requiring high-speed performance.

NXP Semiconductors' MMBT3904,215 is a NPN BJT transistor with 40V VCE, 0.2A IC, and 300MHz fT. Ideal for switching applications, it has a max operating temp of 150°C and features GULL WING terminals in a SMALL OUTLINE package.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;

Diodes Inc. MMBT3906-7-F is a PNP BJT transistor with 3 terminals, max power dissipation of 0.3W, and max collector-emitter voltage of 40V. Ideal for switching applications in small outline packages, it operates b/w -55 to 150°C with a transition frequency of 250MHz.

BC547CTFR by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 45V, min. DC current gain of 420, and max. power dissipation of 0.625W. It is commonly used for switching applications due to its single configuration and cylindrical package shape.

BC547C by Diotec Semiconductor Ag is a NPN small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 45V and a max collector current of 0.1A. It has a min DC current gain of 420 and can operate at temperatures up to 150°C. This transistor is commonly used in applications requiring low power dissipation and high frequency performance, such as audio amplifiers and switching circuits.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): 1 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector-Base Capacitance: 4 pF;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 175 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A;