NXP Semiconductors - 934059506112

  1. Home
  2. NXP Semiconductors - 934059506112
934059506112 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number 934059506112
Description NARROW BAND HIGH POWER; Maximum Operating Temperature: 100 Cel; Characteristic Impedance: 75 ohm; Maximum Operating Frequency: 1003 MHz; Minimum Operating Frequency: 40 MHz; Terminal Finish: GOLD;
Datasheet 934059506112 Datasheet
In Stock3,478
NAME DESCRIPTION
Construction: MODULE
Minimum Operating Frequency: 40 MHz
Characteristic Impedance: 75 ohm
Additional Features: LOW NOISE, HIGH RELIABILITY
Maximum Operating Temperature: 100 Cel
Maximum Operating Frequency: 1003 MHz
RF or Microwave Device Type: NARROW BAND HIGH POWER
Terminal Finish: GOLD
JESD-609 Code: e4
Minimum Operating Temperature: -20 Cel
Gain: 23 dB
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,478 - -

Popular Products

Category Top Products

HMC6981LS6TR by Hittite Microwave

HMC6981LS6TR

Hittite Microwave

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: CERAMIC; Technology: GAAS; Maximum Operating Temperature: 85 Cel;
XB1007-QT-0G00 by Mimix Broadband

XB1007-QT-0G00

Mimix Broadband

WIDE BAND MEDIUM POWER; Minimum Operating Frequency: 4000 MHz; Gain: 23 dB; Maximum Operating Frequency: 11000 MHz; Construction: COMPONENT; Maximum Input Power (CW): 20 dBm;
MGA-86576-TR1 by Broadcom

MGA-86576-TR1

Broadcom

Broadcom's MGA-86576-TR1 is a GAAS RF amplifier with 20dB gain, operating from 1500MHz to 8000MHz. It has a max input power of 13dBm and VSWR of 2.5, suitable for wideband low-power applications in RF & microwave systems. The component features surface mounting and requires a 5V power supply with a max current draw of 22mA.
LEE-29 by Mini-circuits

LEE-29

Mini-circuits

Mini-circuits LEE-29 is a wide band low power RF amplifier with 13.3 dB gain, handling up to 15 dBm CW input power. It operates from 0 to 8000 MHz, with VSWR of 1.6 and characteristic impedance of 50 ohm. Ideal for RF & microwave applications requiring compact, high-performance amplification in temperature range -40 to 85°C.
MBC13916NT1 by Freescale Semiconductor

MBC13916NT1

Freescale Semiconductor

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: BICMOS; Maximum Input Power (CW): 10 dBm; JESD-609 Code: e3; Maximum Operating Frequency: 2500 MHz;
RA18H1213G-101 by Mitsubishi Electric

RA18H1213G-101

Mitsubishi Electric

The Mitsubishi Electric RA18H1213G-101 is a RF amplifier module with 23 dB gain, operating b/w 1240-1300 MHz. It has a max input power of 24.77 dBm and VSWR of 3, suitable for narrowband high-power applications. With hybrid technology and operating temperatures from -30 to 110°C, it's ideal for various RF and microwave systems.
MGA-62563-BLK by Agilent Technologies

MGA-62563-BLK

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Package Equivalence Code: TSSOP6,.08;
TQP3M9019 by Qorvo

TQP3M9019

Qorvo

TQP3M9019 by Qorvo is a wide band medium power RF amplifier with a gain of 20 dB. It operates at frequencies ranging from 50 MHz to 4000 MHz and can handle a max input power of 23 dBm. This component, with its surface mount package, is commonly used in RF and microwave applications.
CMD291P4 by Qorvo

CMD291P4

Qorvo

WIDE BAND MEDIUM POWER; Terminal Finish: Matte Tin (Sn); JESD-609 Code: e3;
ADA-4643-BLKG by Agilent Technologies

ADA-4643-BLKG

Agilent Technologies

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1; Power Supplies (V): 3.5; Terminal Finish: Tin (Sn);
M57706L by Mitsubishi Electric

M57706L

Mitsubishi Electric

The Mitsubishi Electric M57706L is a RF & Microwave Amplifier module with 26 dBm CW input power, 4 VSWR, and operates b/w 135-145 MHz. It features hybrid technology, 50 ohm impedance, and is designed for narrow band high power applications in temperatures ranging from -30 to 110°C.
A64 by TE Connectivity

A64

TE Connectivity

TE Connectivity's A64 is a RF & Microwave Amplifier with a metal package body. It operates at temperatures ranging from 0 to 50 °C and requires a power supply of 15V. With 4 terminals and a max supply current of 38mA, it is suitable for various applications in the field of RF and microwave amplification.
PMA3-14LN+ by Mini-circuits

PMA3-14LN+

Mini-circuits

The Mini-circuits PMA3-14LN+ is a wide band low power RF amplifier with 20.3 dB gain, operating from 50 MHz to 10 GHz. It has a max input power of 12 dBm and VSWR of 1.22, suitable for surface mount applications in RF & microwave systems requiring high performance amplification.
TGA2622-CP by Qorvo

TGA2622-CP

Qorvo

WIDE BAND HIGH POWER;
HMC8412LP2FE by Analog Devices

HMC8412LP2FE

Analog Devices

Analog Devices' HMC8412LP2FE is a wide band low power RF amplifier with 12 dB gain, operating from 400 MHz to 11 GHz. It has a max input power of 25 dBm and VSWR of 1.375, suitable for surface mount applications in RF & microwave systems.
LEE-29+ by Mini-circuits

LEE-29+

Mini-circuits

Mini-circuits LEE-29+ is a wideband low power RF amplifier with 13.3 dB gain, operating from 0 to 8000 MHz. It has a max input power of 15 dBm and VSWR of 1.6, suitable for various RF & microwave applications requiring amplification in the temperature range of -40 to 85°C.
MAX2659ELT/V+ by Analog Devices

MAX2659ELT/V+

Analog Devices

Analog Devices' MAX2659ELT/V+ is a BICMOS RF amplifier with 16.5 dB gain and 50 ohm impedance. It operates at temperatures from -40 to 85 °C, with a max input power of 10 dBm. Ideal for narrow band low power applications, it has a compact surface mount package with 6 terminals.
ABA-52563-TR1G by Broadcom

ABA-52563-TR1G

Broadcom

Broadcom's ABA-52563-TR1G is a wide band low power RF amplifier with 20dB gain, operating from 0 to 3500MHz. It has a max input power of 20dBm and VSWR of 1.4, suitable for surface mount applications in RF & microwave systems. The component features bipolar technology, with a characteristic impedance of 50Ω and matte tin terminal finish.
HMC441LP3 by Analog Devices

HMC441LP3

Analog Devices

HMC441LP3 by Analog Devices is a wide band low power RF amplifier with 10 dB gain and 50 ohm impedance. Operating from 6.5 GHz to 13.5 GHz, it has a max input power of 15 dBm and requires a 5V supply at 115 mA. Ideal for applications requiring high frequency amplification in RF and microwave systems.
HMC414MS8GETR by Hittite Microwave

HMC414MS8GETR

Hittite Microwave

NARROW BAND MEDIUM POWER; JESD-609 Code: e3; Maximum Operating Frequency: 2800 MHz; Maximum Input Power (CW): 17 dBm; Characteristic Impedance: 50 ohm; Terminal Finish: Matte Tin (Sn);