NXP Semiconductors - 934059876115

  1. Home
  2. NXP Semiconductors - 934059876115
934059876115 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number 934059876115
Description NPN; Configuration: CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G6; Terminal Form: GULL WING;
Datasheet 934059876115 Datasheet
In Stock1,226
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Configuration: CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Maximum Turn On Time (ton): 90 ns
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 200
No. of Terminals: 6
Maximum Collector-Emitter Voltage: 45 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 1058 ns
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,226 - -

Popular Products

Category Top Products

2N2222A by Secos

2N2222A

Secos

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; JEDEC-95 Code: TO-92;
SMMBT2222ALT3G by Onsemi

SMMBT2222ALT3G

Onsemi

SMMBT2222ALT3G by Onsemi is a NPN BJT transistor with 40V VCEO, 0.6A IC, and 300MHz fT. Ideal for small signal applications in electronics due to its high DC current gain of 75 (hFE), low power dissipation of 0.3W, and fast turn-on/off times of 35ns/285ns. Its Gull Wing terminals and compact rectangular package make it suitable for surface mount designs.
2N2907A by Asi Semiconductor

2N2907A

Asi Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
JANTX2N2222A by Microchip Technology

JANTX2N2222A

Microchip Technology

JANTX2N2222A by Microchip Tech is a NPN BJT transistor with hFE of 30, VCE of 50V, and IC of 0.8A. Ideal for switching applications due to fast ton of 35ns and toff of 300ns. Operates in temp range -65°C to 200°C, complies with MIL-19500/255 standard.
BC547B by Fairchild Semiconductor

BC547B

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
BC817-40 by Philips Components

BC817-40

Philips Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; No. of Elements: 1;
2N3906 by Diotec Semiconductor Ag

2N3906

Diotec Semiconductor Ag

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Maximum Collector-Emitter Voltage: 40 V;
BC846B by Itt Semiconductor

BC846B

Itt Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
2N2219A by Electronic Transistors

2N2219A

Electronic Transistors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
BC847C by Continental Device India

BC847C

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
JANTX2N2222A by National Semiconductor

JANTX2N2222A

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector-Base Capacitance: 8 pF; Package Style (Meter): CYLINDRICAL;
2N2905A by Zetex Plc

2N2905A

Zetex Plc

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
JANTX2N2222AUA by Silicon Transistor

JANTX2N2222AUA

Silicon Transistor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
MMBT3906 by NXP Semiconductors

MMBT3906

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .2 A;
BC846BS,115 by Nexperia

BC846BS,115

Nexperia

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; No. of Terminals: 6;
MMBT3906 by Minilogic Device

MMBT3906

Minilogic Device

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A; Maximum Operating Temperature: 150 Cel;
2N3904 by Kec

2N3904

Kec

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC817-25 by Philips Semiconductors

BC817-25

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 150 Cel; No. of Elements: 1;
MMBT3904 by Bytesonic Electronics

MMBT3904

Bytesonic Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;
BC857C,215 by NXP Semiconductors

BC857C,215

NXP Semiconductors

BC857C,215 by NXP Semiconductors is a PNP small signal bipolar junction transistor (BJT) with a max VCEsat of 0.65V and a min DC current gain (hFE) of 420. It is commonly used for switching applications due to its surface mount capability and max collector-emitter voltage of 45V.