NXP Semiconductors - 934064642115

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934064642115 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 934064642115
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Case Connection: DRAIN; Avalanche Energy Rating (EAS): 13 mJ;
Datasheet 934064642115 Datasheet
In Stock1,935
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 13 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 21 A
Maximum Pulsed Drain Current (IDM): 169 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 8
Minimum DS Breakdown Voltage: 30 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-N8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Additional Features: LOGIC LEVEL COMPATIBLE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .019 ohm
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