NXP Semiconductors - 934064948115

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934064948115 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 934064948115
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR; Terminal Form: GULL WING;
Datasheet 934064948115 Datasheet
In Stock3,419
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 17 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 57 A
JEDEC-95 Code: MO-235
Maximum Pulsed Drain Current (IDM): 229 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 4
Minimum DS Breakdown Voltage: 30 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0136 ohm
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