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Manufacturer | NXP Semiconductors |
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Manufacturer's Part Number | 934065306115 |
Description | P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Maximum Drain-Source On Resistance: 8.5 ohm; Terminal Position: DUAL; |
Datasheet | 934065306115 Datasheet |
In Stock | 2,675 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | .17 A |
Polarity or Channel Type: | P-CHANNEL |
Surface Mount: | YES |
No. of Terminals: | 6 |
Minimum DS Breakdown Voltage: | 50 V |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-F6 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | FLAT |
Operating Mode: | ENHANCEMENT MODE |
Additional Features: | LOGIC LEVEL COMPATIBLE |
Maximum Drain-Source On Resistance: | 8.5 ohm |