NXP Semiconductors - 934065568112

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; JESD-609 Code: e3; Maximum Voltage Standing Wave Ratio: 10; No. of Functions: 1; Maximum Input Power (CW): 30 dBm;

WIDE BAND MEDIUM POWER; Construction: COMPONENT; Maximum Input Power (CW): 23 dBm; Maximum Operating Temperature: 85 Cel; Characteristic Impedance: 50 ohm; Minimum Operating Frequency: 50 MHz;

WIDE BAND LOW POWER; Maximum Operating Temperature: 85 Cel; Construction: COMPONENT; Maximum Operating Frequency: 20000 MHz; Gain: 14 dB; Characteristic Impedance: 50 ohm;

WIDE BAND MEDIUM POWER; Terminal Finish: Matte Tin (Sn); Maximum Operating Frequency: 6000 MHz; Construction: COMPONENT; Minimum Operating Frequency: 0 MHz; Minimum Operating Temperature: -40 Cel;

WIDE BAND HIGH POWER; Maximum Operating Frequency: 18000 MHz; JESD-609 Code: e3/e4; Terminal Finish: MATTE TIN/GOLD; Minimum Operating Frequency: 0 MHz; Maximum Input Power (CW): 43 dBm;

Analog Devices' HMC960LP4E is a wide band high power RF amplifier with 0 dB gain, operating from 0 to 100 MHz. It features a surface mount package with 24 terminals and operates b/w -40°C to +85°C. Ideal for applications requiring high power amplification in RF and microwave systems.

Qorvo's QPM1000 is a wide band low power RF amplifier with 17 dB gain, operating from 2-20 GHz. It can handle up to 33 dBm CW input power and has a characteristic impedance of 50 ohms. Ideal for applications requiring surface mount construction in RF & microwave systems.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Supply Current: 70 mA;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 5;

HMC326MS8GE by Analog Devices is a wide band medium power RF amplifier with 18 dB gain and 50 ohm impedance. It operates b/w 3-4.5 GHz, handling up to 15 dBm CW input power. This component is ideal for applications requiring high frequency amplification in RF and microwave systems.

WIDE BAND LOW POWER; Construction: COMPONENT; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e4; Minimum Operating Temperature: -55 Cel; Gain: 14 dB;

NARROW BAND HIGH POWER;

Broadcom's MGA-631P8-BLKG is a GAAS RF amplifier with 16dB gain, operating from 400MHz to 1500MHz. It has a max input power of 20dBm and uses a 4V power supply. Ideal for wideband low-power applications, this component features surface mounting and a characteristic impedance of 50Ω.

The NXP Semiconductors BGU7005,115 is a RF & Microwave Amplifier with 14 dB gain and 50 ohm impedance. Operating b/w 1559-1610 MHz, it has a max input power of 0 dBm. Ideal for narrow band low power applications, this component is surface mountable and operates in temperatures ranging from -40 to 85 °C.

HMC311LP3E by Analog Devices is a GAAS RF amplifier with 12dB gain, operating from 0-6000MHz. It has a max input power of 10dBm and operates on a 5V power supply. Ideal for wideband low-power applications in RF & microwave systems due to its surface mount package and 50 ohm characteristic impedance.

NXP Semiconductors' MW7IC2040NR1 is a MOS RF amplifier with 29.5 dB gain, operating from 1805-1990 MHz. It handles up to 25 dBm CW input power, with VSWR of 5 and characteristic impedance of 50 ohm. Ideal for narrowband high-power applications in RF and microwave systems.

Qorvo's SPF-5189Z is a GAAS RF amplifier with 11.3 dB gain, operating from 50 MHz to 4 GHz. It has a max input power of 27 dBm and operates on a 5V supply. Ideal for wideband medium-power applications, it features surface mounting and a plastic/epoxy package body.

The NXP Semiconductors MW7IC008NT1 is a MOS technology RF amplifier with 2 functions, offering a gain of 21.5 dB and operating frequency range from 100 MHz to 1000 MHz. It has a max input power of 38 dBm and VSWR of 10, suitable for wideband high-power applications in RF and microwave systems. The component comes in a plastic/epoxy package with matte tin finish, featuring 24 terminals for surface mount installation at a power supply of 28V.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Power Supplies (V): 3;

MAX2630EUS-T by Maxim Integrated is a wide band low power RF amplifier with 11dB gain, operating from 800MHz to 1GHz. It has a max input power of 5dBm and VSWR of 1.25, suitable for applications requiring surface mount construction in RF & microwave systems.