NXP Semiconductors - 934065667147

Analog Devices' HMC994APM5E is a wide band medium power RF amplifier with 13 dB gain and 25 dBm CW input power. With a VSWR of 7, it operates from -40°C to 85°C, covering frequencies from 0 MHz to 28 GHz. Ideal for RF and microwave applications requiring high performance amplification in various environments.

WIDE BAND HIGH POWER;

HELA-10D by Mini-circuits is a wideband medium power RF amplifier with 9.3 dB gain, handling up to 20 dBm CW input power. It operates b/w 8-300 MHz frequencies with VSWR of 1.2, suitable for various RF and microwave applications requiring a 50 ohm impedance.

TRF37C73IDSGT by Texas Instruments is a wide band low power RF amplifier with 18dB gain, operating from 1MHz to 6GHz. It has a max input power of 10dBm and operates on a 3.3V supply, suitable for applications requiring high frequency amplification in RF systems. The component comes in an 8-terminal plastic/epoxy package for surface mounting, making it ideal for various RF and microwave applications.

AD8350ARMZ20 by Analog Devices is a wide band medium power RF amplifier with 19 dB gain and 1000 MHz max operating frequency. It can handle up to 8 dBm CW input power, making it ideal for RF applications requiring high performance in the -40 to 85°C temperature range.

WIDE BAND MEDIUM POWER;

TQP7M9102 by Qorvo is a wide band medium power RF amplifier with 15 dB gain, operating from 400 MHz to 4000 MHz. It can handle up to 27 dBm CW input power and has a characteristic impedance of 50 ohm. Ideal for applications requiring high frequency amplification in environments ranging from -40°C to 85°C.

HMC907APM5E by Analog Devices is a wide band medium power RF amplifier with 12 dB gain and 25 dBm max input power. It operates from 200 MHz to 22 GHz, has a VSWR of 7, and requires a 10V supply. Ideal for RF & microwave applications requiring high performance in plastic/epoxy package.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 5; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;

Broadcom's MGA-81563-BLK is a GAAS RF amplifier with 10.5 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 13 dBm and VSWR of 2, suitable for wideband low-power applications in temperatures ranging from -40°C to 85°C. The component features surface mounting and requires a 3V power supply with a max current draw of 51 mA.

WIDE BAND LOW POWER;

WIDE BAND HIGH POWER;

WIDE BAND LOW POWER;

HELA-10B+ by Mini-circuits is a wideband medium power RF amplifier with 9.5 dB gain, suitable for frequencies ranging from 50 MHz to 1000 MHz. It can handle a max input power of 20 dBm and has a VSWR of 1.22, making it ideal for various RF and microwave applications.

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Power Supplies (V): 3;

GALI-21+ by Mini-circuits is a wideband low power RF amplifier with 11.5 dB gain, suitable for frequencies from 0 to 8000 MHz. It has a max input power of 15 dBm and VSWR of 2.5, making it ideal for RF and microwave applications requiring compact surface-mount components.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: TSSOP6,.08;

NXP Semiconductors' MMZ25332BT1 is a RF amplifier with 5V power supply, 12 terminals, and 412mA max supply current. It features bipolar technology, wide band medium power for surface mount applications in RF & microwave systems.

Agilent Technologies' MGA-545P8-TR1G is a wide band medium power RF amplifier with 10.5 dB gain, operating from 50 MHz to 7000 MHz. It can handle up to 20 dBm CW input power and has a characteristic impedance of 50 ohm. Ideal for RF & microwave applications requiring high frequency amplification in component construction.