NXP Semiconductors - 934066414127

  1. Home
  2. NXP Semiconductors - 934066414127
934066414127 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number 934066414127
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 40 V; Transistor Element Material: SILICON; JEDEC-95 Code: TO-262AA;
Datasheet 934066414127 Datasheet
In Stock1,120
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 419 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 100 A
JEDEC-95 Code: TO-262AA
Maximum Pulsed Drain Current (IDM): 781 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 40 V
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Additional Features: AVALANCHE RATED
Reference Standard: AEC-Q101; IEC-60134
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0032 ohm
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,120 - -

Popular Products

Category Top Products

FQB47P06TM-AM002 by Onsemi

FQB47P06TM-AM002

Onsemi

FQB47P06TM-AM002 by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, 188A IDM, and 0.026 ohm RDS. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Features include 820mJ EAS, 160W Pdiss, and -55 to +175°C Temp Range.
STW12NK90Z by STMicroelectronics

STW12NK90Z

STMicroelectronics

STW12NK90Z by STMicroelectronics is a N-CHANNEL Power FET with 900V DS Breakdown Voltage and 44A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and operates in ENHANCEMENT MODE. With a max power dissipation of 230W, this transistor has a 0.88 ohm RDS(on) and can handle up to 11A drain current.
IRFR9120NTRPBF by Infineon Technologies

IRFR9120NTRPBF

Infineon Technologies

IRFR9120NTRPBF by Infineon is a P-CHANNEL FET with 100V DS breakdown voltage and 26A IDM. Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. With a max power dissipation of 40W, this MOSFET has a drain-source on resistance of 0.48 ohm and can handle up to 6.6A ID.
SI7469DP-T1-E3 by Vishay Intertechnology

SI7469DP-T1-E3

Vishay Intertechnology

SI7469DP-T1-E3 by Vishay Intertechnology is a P-CHANNEL FET with 80V DS Breakdown Voltage, 40A IDM, and 0.025 ohm RDS(ON). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 83W.
SI7463ADP-T1-GE3 by Vishay Intertechnology

SI7463ADP-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SI7463ADP-T1-GE3 is a P-CHANNEL FET with 40V DS Breakdown Voltage and 70A IDM. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE and operates in ENHANCEMENT MODE.
BS170 by Telcom Semiconductor

BS170

Telcom Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; JESD-609 Code: e0; Maximum Drain Current (ID): .5 A;
NTF3055L108T1G by Onsemi

NTF3055L108T1G

Onsemi

NTF3055L108T1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 9A IDM, and 0.12 ohm RDS(on). Ideal for switching applications, it features an N-CHANNEL configuration in a PLASTIC/EPOXY package with GULL WING terminals. Operating in enhancement mode, it has a max power dissipation of 2.1W and can withstand temperatures up to 175°C.
FQD12N20LTM_F085 by Fairchild Semiconductor

FQD12N20LTM_F085

Fairchild Semiconductor

FQD12N20LTM_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 200V DS Breakdown Voltage, 36A IDM, and 0.32 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE with a max power dissipation of 55W.
AUIRFZ44N by International Rectifier

AUIRFZ44N

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; JESD-30 Code: R-PSFM-T3; Package Style (Meter): FLANGE MOUNT;
BSZ086P03NS3EGATMA1 by Infineon Technologies

BSZ086P03NS3EGATMA1

Infineon Technologies

Infineon BSZ086P03NS3EGATMA1 is a P-CHANNEL FET with 30V DS Breakdown Voltage, 160A IDM, and 0.0134 ohm RDS. Ideal for SWITCHING applications in ENHANCEMENT MODE, it features METAL-OXIDE SEMICONDUCTOR tech and operates up to 150°C.
IRFZ44NSTRL by International Rectifier Hirel Products

IRFZ44NSTRL

International Rectifier Hirel Products

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-263AB; Qualification: Not Qualified; Package Shape: RECTANGULAR;
IRLML0030TRPBF by International Rectifier

IRLML0030TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; No. of Terminals: 3; Transistor Element Material: SILICON;
IRF640 by International Rectifier

IRF640

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Qualification: Not Qualified; Maximum Power Dissipation Ambient: 125 W;
IRF7103TRPBF-1 by Infineon Technologies

IRF7103TRPBF-1

Infineon Technologies

Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1;
FDD6685 by Fairchild Semiconductor

FDD6685

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Qualification: Not Qualified; JESD-30 Code: R-PSSO-G2;
FQA36P15 by Fairchild Semiconductor

FQA36P15

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 294 W; Minimum DS Breakdown Voltage: 150 V; Qualification: Not Qualified;
IRFP460APBF by Vishay Intertechnology

IRFP460APBF

Vishay Intertechnology

Vishay Intertechnology's IRFP460APBF is a N-CHANNEL Power FET with 500V DS Breakdown Voltage and 80A IDM. Ideal for SWITCHING applications, it features a max power dissipation of 280W and operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C.
BSZ15DC02KDHXTMA1 by Infineon Technologies

BSZ15DC02KDHXTMA1

Infineon Technologies

Infineon BSZ15DC02KDHXTMA1 is a Power FET with N/P-Channel, 20V DS Breakdown Voltage, and 0.055 ohm RDS(ON). Commonly used in automotive applications due to AEC-Q101 standard compliance.
FDB3632_F085 by Fairchild Semiconductor

FDB3632_F085

Fairchild Semiconductor

Fairchild Semiconductor's FDB3632_F085 is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 12A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.009 ohm On Resistance, and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, this transistor has a max power dissipation of 310W and can withstand temperatures up to 175°C.
IRF7304TRPBF by Infineon Technologies

IRF7304TRPBF

Infineon Technologies

IRF7304TRPBF by Infineon Technologies is a P-CHANNEL FET with 20V DS Breakdown Voltage and 3.6A ID. It features a built-in diode, 0.09 ohm RDS(on), and operates in enhancement mode. Ideal for power management applications requiring high drain current capabilities in compact designs.