Image shown is a representation only.
| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | 934066633127 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 60 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY; |
| Datasheet | 934066633127 Datasheet |
| In Stock | 474 |
| NAME | DESCRIPTION |
|---|---|
| Avalanche Energy Rating (EAS): | 37 mJ |
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 58 A |
| JEDEC-95 Code: | TO-262AA |
| Maximum Pulsed Drain Current (IDM): | 234 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | NO |
| No. of Terminals: | 3 |
| Minimum DS Breakdown Voltage: | 60 V |
| Terminal Position: | SINGLE |
| Package Style (Meter): | IN-LINE |
| JESD-30 Code: | R-PSIP-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ENHANCEMENT MODE |
| Additional Features: | AVALANCHE RATED |
| Reference Standard: | AEC-Q101; IEC-60134 |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .013 ohm |
