NXP Semiconductors - 934066977115

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934066977115 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 934066977115
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Pulsed Drain Current (IDM): 90 A; Maximum Drain-Source On Resistance: .035 ohm;
Datasheet 934066977115 Datasheet
In Stock3,403
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 19.5 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 22 A
Maximum Pulsed Drain Current (IDM): 90 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 6
Minimum DS Breakdown Voltage: 60 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: AVALANCHE RATED
Reference Standard: AEC-Q101; IEC-60134
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .035 ohm
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