NXP Semiconductors - 934067449127

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934067449127 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 934067449127
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 386 mJ; Transistor Element Material: SILICON; Package Shape: RECTANGULAR;
Datasheet 934067449127 Datasheet
In Stock2,591
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 386 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 70 A
JEDEC-95 Code: TO-262AA
Maximum Pulsed Drain Current (IDM): 280 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 120 V
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Additional Features: AVALANCHE RATED
Reference Standard: IEC-60134
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0079 ohm
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