NXP Semiconductors - 934067694135

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934067694135 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 934067694135
Description RF Small Signal Bipolar Transistors;
Datasheet 934067694135 Datasheet
In Stock3,535
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NXP Semiconductors' BFU910FX is a NPN RF BJT transistor with 4 terminals, suitable for K Band applications. With a max fT of 90 GHz and IC of 0.015 A, it's ideal for amplifier circuits requiring high-frequency performance in small outline packages. The device features silicon germanium element material and can withstand peak reflow temp of 260°C per IEC-60134 standard.
CA3083M by Intersil

CA3083M

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CA3083M by Intersil is a NPN BJT with 5 elements, ideal for high-frequency switching applications. With a max fT of 450 MHz and IC of 0.1 A, it operates in the VHF band and comes in a small outline package for surface mounting.
LM3046M/NOPB by National Semiconductor

LM3046M/NOPB

National Semiconductor

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 550 MHz; Maximum Collector Current (IC): .05 A; No. of Terminals: 14;
SD1438-2 by STMicroelectronics

SD1438-2

STMicroelectronics

NPN; Surface Mount: NO; Transistor Element Material: SILICON; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb);
MPSH17RLRA by Onsemi

MPSH17RLRA

Onsemi

MPSH17RLRA by Onsemi is an NPN RF BJT transistor with a max fT of 800 MHz. It has a Pdiss of 0.625 W and VCEO of 15 V, ideal for amplifier applications in the very high frequency band. The package is cylindrical with through-hole terminals and can operate up to 150 °C.
2SC4399-4 by Onsemi

2SC4399-4

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RF Small Signal Bipolar Transistors;
LM3046M by Texas Instruments

LM3046M

Texas Instruments

LM3046M by Texas Instruments is an NPN BJT with 5 elements and 14 terminals. It operates in the very high frequency band at 550 MHz, ideal for amplifier applications. With a max collector-emitter voltage of 15V and max collector current of 0.05A, it's suitable for small outline packages in RF circuits.
BFU710F,115 by NXP Semiconductors

BFU710F,115

NXP Semiconductors

RF Small Signal Bipolar Transistors; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;
BSX93 by STMicroelectronics

BSX93

STMicroelectronics

BSX93 by STMicroelectronics is an NPN RF BJT designed for switching applications. It features a max power dissipation of 0.36W, operates up to 200 °C, and has a nominal transition frequency of 650MHz. Ideal for compact electronic circuits requiring efficient signal control.
2SC4399-5 by Onsemi

2SC4399-5

Onsemi

RF Small Signal Bipolar Transistors;
MPS5179RLRA by Onsemi

MPS5179RLRA

Onsemi

MPS5179RLRA by Onsemi is a NPN RF BJT transistor with 3 terminals, suitable for amplifier applications in the very high frequency band. It has a max collector-emitter voltage of 12V, max power dissipation of 0.2W, and transition frequency of 900MHz. Ideal for through-hole mounting in electronic circuits.
BFR93AR by Temic Semiconductors

BFR93AR

Temic Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .05 A; Maximum Collector-Emitter Voltage: 12 V;
934067706215 by NXP Semiconductors

934067706215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10500 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .05 A;
LA733Q by Onsemi

LA733Q

Onsemi

LA733Q by Onsemi is a PNP BJT transistor with 3 terminals, suitable for amplifier applications in the VHF band. It has a max power dissipation of 1.5W, hFE of 135, and fT of 100MHz. The package is cylindrical with through-hole terminals and can operate up to 150 °C.
JANS2N2907AUBC by Vpt Components

JANS2N2907AUBC

Vpt Components

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .6 A; No. of Elements: 1; Reference Standard: MIL-19500;
CA3086M96 by Intersil

CA3086M96

Intersil

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 550 MHz; Maximum Collector Current (IC): .05 A; Terminal Finish: TIN LEAD;
BF771E6327HTSA1 by Infineon Technologies

BF771E6327HTSA1

Infineon Technologies

Infineon's BF771E6327HTSA1 is a NPN BJT transistor with 12V VCEO, 8000MHz fT, and 0.08A IC. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mount assembly. Operating up to 150°C, it features low collector-base capacitance of 1pF.
BFR92A,235 by NXP Semiconductors

BFR92A,235

NXP Semiconductors

NXP Semiconductors' BFR92A,235 is an NPN RF BJT transistor with a max fT of 5000 MHz. It has a max power dissipation of 0.3W and operates up to 150°C. Ideal for amplifier applications in L Band due to its small outline package and high transition frequency.
LM3046M by National Semiconductor

LM3046M

National Semiconductor

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 550 MHz; Maximum Collector Current (IC): .05 A; No. of Elements: 5;
KSC1674YBU by Onsemi

KSC1674YBU

Onsemi

KSC1674YBU by Onsemi is an NPN RF BJT transistor with a max. collector-emitter voltage of 20V and fT of 600MHz. Ideal for amplifier applications, it has a min. hFE of 120 and operates at up to 150°C. Packaged in plastic/epoxy, it features through-hole terminals and a max. power dissipation of 0.25W.