NXP Semiconductors - 935289297115

  1. Home
  2. NXP Semiconductors - 935289297115
935289297115 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number 935289297115
Description WIDE BAND MEDIUM POWER; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 25 dBm; Maximum Operating Frequency: 2700 MHz; Minimum Operating Frequency: 400 MHz; Minimum Operating Temperature: -40 Cel;
Datasheet 935289297115 Datasheet
In Stock3,783
NAME DESCRIPTION
Construction: COMPONENT
Maximum Input Power (CW): 25 dBm
Minimum Operating Frequency: 400 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 85 Cel
Maximum Operating Frequency: 2700 MHz
RF or Microwave Device Type: WIDE BAND MEDIUM POWER
Terminal Finish: TIN
JESD-609 Code: e3
Minimum Operating Temperature: -40 Cel
Gain: 13.5 dB
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,783 - -

Popular Products

Category Top Products

ECG008B-G by Triquint Semiconductor

ECG008B-G

Triquint Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 7.2;
1214-800P by Microsemi

1214-800P

Microsemi

RF/Microwave Amplifiers; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Package Equivalence Code: MODULE(UNSPEC); Power Supplies (V): 50;
HMC392ALC4 by Analog Devices

HMC392ALC4

Analog Devices

HMC392ALC4 by Analog Devices is a RF & Microwave Amplifier with 20 dBm CW input power, 14.5 dB gain, and 3500-8000 MHz frequency range. It operates at temperatures from -40 to 85°C and requires a 5V power supply. Ideal for wideband low-power applications due to its GaAs technology and surface mounting feature.
CMD170P4 by Qorvo

CMD170P4

Qorvo

WIDE BAND MEDIUM POWER;
HMC465LP5ETR by Analog Devices

HMC465LP5ETR

Analog Devices

Analog Devices' HMC465LP5ETR is a wide band low power RF amplifier with 9.5 dB gain and 50 ohm impedance. It operates from 0 to 20,000 MHz, handles up to 23 dBm CW input power, and has a max temperature range of -40 to +85°C. Ideal for RF and microwave applications requiring high performance in a compact plastic/epoxy package.
HMC7950LS6TR by Analog Devices

HMC7950LS6TR

Analog Devices

Analog Devices' HMC7950LS6TR is a wide band low power RF amplifier with 13 dB gain, operating from 2-28 GHz. It can handle up to 20 dBm CW input power and operates b/w -40°C to +85°C. Ideal for RF & microwave applications requiring high frequency amplification in a compact form factor.
TQP3M9019 by Qorvo

TQP3M9019

Qorvo

TQP3M9019 by Qorvo is a wide band medium power RF amplifier with a gain of 20 dB. It operates at frequencies ranging from 50 MHz to 4000 MHz and can handle a max input power of 23 dBm. This component, with its surface mount package, is commonly used in RF and microwave applications.
AFD4-020040-20P by L-3 Narda-miteq

AFD4-020040-20P

L-3 Narda-miteq

AFD4-020040-20P by L-3 Narda-miteq is a COAXIAL RF amplifier with 32 dB gain, VSWR of 2, operating from 2-4 GHz. Ideal for wideband medium power applications in RF & microwave systems.
SBB5089ZSR by Rf Micro Devices

SBB5089ZSR

Rf Micro Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -40 Cel;
CC2590RGVR by Texas Instruments

CC2590RGVR

Texas Instruments

CC2590RGVR by Texas Instruments is a 16-terminal RF amplifier with a gain of 14.1 dB, operating b/w 2400-2483.5 MHz. It has a max input power of 10 dBm and operates on a 3V power supply. Ideal for narrowband low-power applications requiring surface mounting in temperatures ranging from -40 to 85°C.
MMG3014NT1 by NXP Semiconductors

MMG3014NT1

NXP Semiconductors

MMG3014NT1 by NXP Semiconductors is a RF & Microwave Amplifier with 15 dBm CW input power, 18.5 dB gain, and 50 ohm impedance. It operates from 40 MHz to 4000 MHz, suitable for wide band medium power applications. This component has a plastic/epoxy package body material and requires a 5V power supply with max current of 160 mA.
SP9711 by Spectrum Control

SP9711

Spectrum Control

WIDE BAND LOW POWER; Maximum Voltage Standing Wave Ratio: 2; Minimum Operating Frequency: 1000 MHz; Characteristic Impedance: 50 ohm; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 85 Cel;
TQP7M9102-PCB2140 by Qorvo

TQP7M9102-PCB2140

Qorvo

WIDE BAND MEDIUM POWER; JESD-609 Code: e4; Terminal Finish: NICKEL PALLADIUM GOLD;
CMD192C5 by Custom Mmic Design Services

CMD192C5

Custom Mmic Design Services

WIDE BAND LOW POWER; Minimum Operating Temperature: -40 Cel; Gain: 17 dB; JESD-609 Code: e4; Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au); Additional Features: LOW NOISE;
PHA-202+ by Mini-circuits

PHA-202+

Mini-circuits

The Mini-circuits PHA-202+ is a wideband medium power RF amplifier with 13.2 dB gain, operating from 30 MHz to 2700 MHz. It can handle up to 19 dBm CW input power and operates in temperatures ranging from -40°C to 85°C. Ideal for RF and microwave applications requiring high gain and broad frequency coverage.
TQP3M9018 by Triquint Semiconductor

TQP3M9018

Triquint Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Minimum Operating Frequency: 50 MHz; Minimum Operating Temperature: -40 Cel;
MGA-61563-TR2G by Broadcom

MGA-61563-TR2G

Broadcom

Broadcom's MGA-61563-TR2G is a GAAS RF amplifier with 6.9dB gain, operating from 100MHz to 6GHz. It has a max input power of 18dBm and VSWR of 2, suitable for wideband low-power applications. This surface-mount component with matte tin finish offers high performance in RF and microwave systems.
MAX9931EUA+T by Maxim Integrated

MAX9931EUA+T

Maxim Integrated

MAX9931EUA+T by Maxim Integrated is a wide band low power RF amplifier with 50 ohm impedance. It operates from 2 MHz to 1600 MHz, handling up to 16 dBm CW input power. Ideal for RF and microwave applications, it has a temperature range of -40°C to 85°C.
BGA614H6327XTSA1 by Infineon Technologies

BGA614H6327XTSA1

Infineon Technologies

Infineon's BGA614H6327XTSA1 is a wide band low power RF amplifier with 17.5 dB gain and 10 dBm max input power. Operating from -65 to 150 °C, it covers frequencies from 0 to 2400 MHz, making it ideal for RF & microwave applications requiring high performance in a compact form factor.
HMC498LC4TR by Analog Devices

HMC498LC4TR

Analog Devices

HMC498LC4TR by Analog Devices is a wide band medium power RF amplifier with 18 dB gain, operating from 17-24 GHz. It has a max input power of 10 dBm and operates on a 5V power supply. Ideal for RF and microwave applications requiring high performance amplification in a compact ceramic package.