NXP Semiconductors - 935290055115

  1. Home
  2. NXP Semiconductors - 935290055115
935290055115 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number 935290055115
Description WIDE BAND LOW POWER; Maximum Operating Frequency: 2200 MHz; Characteristic Impedance: 50 ohm; JESD-609 Code: e3; Maximum Operating Temperature: 85 Cel; Maximum Input Power (CW): -21 dBm;
Datasheet 935290055115 Datasheet
In Stock4,169
NAME DESCRIPTION
Construction: COMPONENT
Maximum Input Power (CW): -21 dBm
Minimum Operating Frequency: 0 MHz
Characteristic Impedance: 50 ohm
Additional Features: LOW NOISE
Maximum Operating Temperature: 85 Cel
Maximum Operating Frequency: 2200 MHz
RF or Microwave Device Type: WIDE BAND LOW POWER
Terminal Finish: TIN
JESD-609 Code: e3
Minimum Operating Temperature: -40 Cel
Gain: 28.1 dB
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
4,169 - -

Popular Products

Category Top Products

HMC1053 by Hittite Microwave

HMC1053

Hittite Microwave

WIDE BAND HIGH POWER; Terminal Finish: Gold (Au); JESD-609 Code: e4;
MGA-53543-BLKG by Agilent Technologies

MGA-53543-BLKG

Agilent Technologies

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Gain: 14 dB; Terminal Finish: Tin (Sn); JESD-609 Code: e3; Additional Features: LOW NOISE;
MGA-23003-BLKG by Broadcom

MGA-23003-BLKG

Broadcom

Broadcom's MGA-23003-BLKG is a RF & Microwave Amplifier with 32 dB Gain, operating b/w 3300-3800 MHz. It has a Max Input Power of 15 dBm and operates on a 3.3V power supply. Ideal for narrowband medium power applications due to its GaAs technology and surface mounting feature.
XF1001-SC-0G00 by M/a-com Technology Solutions

XF1001-SC-0G00

M/a-com Technology Solutions

XF1001-SC-0G00 by M/a-com Technology Solutions is a wide band medium power RF amplifier with 10.1 dB gain and max input power of 24 dBm. It operates in the frequency range of 0-6000 MHz, making it suitable for various RF and microwave applications requiring high performance amplification in temperatures ranging from -40 to 85°C.
ADPA1105ACGZN by Analog Devices

ADPA1105ACGZN

Analog Devices

ADPA1105ACGZN by Analog Devices is a GAN RF amplifier with 30.5 dB gain, operating from 900 MHz to 1600 MHz. It has a max input power of 30 dBm and VSWR of 1.5, suitable for narrowband high-power applications in RF & microwave systems. With surface mounting feature and operating temperatures from -40°C to 85°C, it offers reliable performance in various environments.
SST12LP08-QXBE by Silicon Storage Technology

SST12LP08-QXBE

Silicon Storage Technology

NARROW BAND MEDIUM POWER; Maximum Input Power (CW): 5 dBm; Additional Features: HIGH RELIABILITY; Maximum Operating Frequency: 2484 MHz; Gain: 29 dB; Maximum Operating Temperature: 85 Cel;
CMA-83LN+ by Mini-circuits

CMA-83LN+

Mini-circuits

CMA-83LN+ by Mini-circuits is a wide band low power RF amplifier with 18.5 dB gain, operating from 500 MHz to 8000 MHz. It has a max input power of 16 dBm and VSWR of 1.19, suitable for surface mount applications in RF & microwave systems requiring high performance amplification.
HMC441LP3TR by Hittite Microwave

HMC441LP3TR

Hittite Microwave

WIDE BAND LOW POWER; Maximum Operating Frequency: 13500 MHz; Construction: COMPONENT; Characteristic Impedance: 50 ohm; Gain: 10 dB; Maximum Input Power (CW): 15 dBm;
MAR-8ASM by Mini-circuits

MAR-8ASM

Mini-circuits

MAR-8ASM by Mini-circuits is a wide band low power RF amplifier with 20 dB gain, 50 ohm impedance, and 1.8 VSWR. Ideal for RF & microwave applications, it operates from -40 to 85°C, has a max input power of 13 dBm, and covers frequencies from DC to 1000 MHz.
SGA3563Z by Qorvo

SGA3563Z

Qorvo

SGA3563Z by Qorvo is a wide band low power RF amplifier with 19.5 dB gain, operating from 0 to 5000 MHz. It has a max input power of 18 dBm and operates at temperatures ranging from -40 to 85°C. Ideal for applications requiring high frequency amplification in RF & microwave systems.
BGU8007,115 by NXP Semiconductors

BGU8007,115

NXP Semiconductors

NXP Semiconductors' BGU8007,115 is a RF & Microwave Amplifier with 6 terminals and Tin finish. It operates b/w -40 to 85°C, powered by 1.8V supply at max current of 14.7mA. Ideal for surface mount applications in various electronic devices.
HMC478SC70ETR by Analog Devices

HMC478SC70ETR

Analog Devices

Analog Devices' HMC478SC70ETR is a wide band low power RF amplifier with 5V supply, 82mA max current, and -40 to 85°C operating range. Its bipolar technology and surface mount package make it ideal for RF & microwave applications requiring high performance in compact designs.
ECG008B-G by Wj Communications

ECG008B-G

Wj Communications

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Package Equivalence Code: TO-243;
LT5524EFE#PBF by Analog Devices

LT5524EFE#PBF

Analog Devices

LT5524EFE#PBF by Analog Devices is a wide band low power RF amplifier with 50 ohm impedance, 4.5 dB gain, and 540 MHz max frequency. Ideal for applications requiring amplification in RF and microwave circuits operating b/w -40°C to 85°C.
AD8354ACPZ-REEL7 by Analog Devices

AD8354ACPZ-REEL7

Analog Devices

AD8354ACPZ-REEL7 by Analog Devices is a RF amplifier with 17.3 dB gain, operating from 1 MHz to 2700 MHz. It has a max input power of 10 dBm and operates on 3/5 V supplies. Ideal for wideband low-power applications requiring a component construction with matte tin terminals in plastic/epoxy package.
HMC3587LP3BETR by Analog Devices

HMC3587LP3BETR

Analog Devices

Analog Devices' HMC3587LP3BETR is a wide band low power RF amplifier with 15 dB gain and 50 ohm impedance. It operates from 4-10 GHz, handles up to 12 dBm CW input power, and draws 60 mA at 5V. Ideal for RF applications requiring surface mount components in the -40 to +85°C range.
HMC561LP3E by Analog Devices

HMC561LP3E

Analog Devices

Analog Devices' HMC561LP3E is a wide band low power RF amplifier with 16 terminals, operating from 8-21 GHz. It offers a max input power of 10 dBm, suitable for applications requiring RF amplification in the frequency range. The component is constructed using GaAs technology and can operate b/w -40 to 85°C, making it ideal for various RF and microwave applications.
MD7IC2012GNR1,528 by NXP Semiconductors

MD7IC2012GNR1,528

NXP Semiconductors

NARROW BAND HIGH POWER;
HMC327MS8GTR by Analog Devices

HMC327MS8GTR

Analog Devices

Analog Devices' HMC327MS8GTR is a wide band medium power RF amplifier with 5V power supply, operating from -40 to 85°C. It features a plastic/epoxy package, bipolar technology, and surface mounting. Ideal for RF and microwave applications requiring high performance in compact designs.
MGA-30889-BLKG by Broadcom

MGA-30889-BLKG

Broadcom

Broadcom's MGA-30889-BLKG is a GAAS RF amplifier with 14.6 dB gain, operating from 40 MHz to 2600 MHz. It has a max input power of 20 dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems. The component features surface mounting and matte tin terminals, with a characteristic impedance of 50 ohms.