NXP Semiconductors - 935320365128

  1. Home
  2. NXP Semiconductors - 935320365128
935320365128 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number 935320365128
Description RF Power Field-Effect Transistors;
Datasheet 935320365128 Datasheet
In Stock2,087
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,087 - -

Popular Products

Category Top Products

AFT09MS031NR1 by Freescale Semiconductor

AFT09MS031NR1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 317 W; Maximum Time At Peak Reflow Temperature (s): 40; Maximum Operating Temperature: 150 Cel;
MRF300AN-50MHZ by NXP Semiconductors

MRF300AN-50MHZ

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
CG2H40035F by Wolfspeed

CG2H40035F

Wolfspeed

CG2H40035F by Wolfspeed is a N-CHANNEL RF Power FET with a min DS Breakdown Voltage of 84V and a min Power Gain (Gp) of 13.5dB. It is commonly used as an amplifier in C Band applications.
PTVA101K02EVV1 by Infineon Technologies

PTVA101K02EVV1

Infineon Technologies

RF Power Field-Effect Transistors;
CLF1G0035S-100 by Ampleon Netherlands B V

CLF1G0035S-100

Ampleon Netherlands B V

RF Power Field-Effect Transistors;
CGH40120F-TB by Wolfspeed

CGH40120F-TB

Wolfspeed

Wolfspeed's CGH40120F-TB is an N-CHANNEL RF Power FET with 120V DS Breakdown Voltage. It operates in S BAND, featuring Gallium Nitride technology for high electron mobility. Ideal for amplifier applications, it has a ceramic-metal-sealed co-fired package and gold over nickel terminal finish.
STAP57030 by STMicroelectronics

STAP57030

STMicroelectronics

STAP57030 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its compact flange mount design ensures efficient performance in demanding environments.
NE5550979A-T1-A by Renesas Electronics

NE5550979A-T1-A

Renesas Electronics

NE5550979A-T1-A by Renesas Electronics is a N-CHANNEL RF Power FET with 3A max drain current and 25W power dissipation. Ideal for high-frequency applications, it operates up to 150°C, making it suitable for various RF power amplification needs in surface-mount configurations.
PD57045S-E by STMicroelectronics

PD57045S-E

STMicroelectronics

PD57045S-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, breakdown voltage of 65 V, and operates in the ultra-high frequency band. Ideal for compact designs with high power dissipation up to 73 W.
MRF6VP3450HR5 by NXP Semiconductors

MRF6VP3450HR5

NXP Semiconductors

NXP Semiconductors' MRF6VP3450HR5 is a RF Power FET with 110V DS Breakdown Voltage, operating in the Ultra High Frequency Band. It features N-CHANNEL polarity, SINGLE configuration, and METAL-OXIDE SEMICONDUCTOR technology. Ideal for AMPLIFIER applications, this transistor has a max temp of 225°C and comes in a CERAMIC package with FLANGE MOUNT style.
A2T26H300-24SR6 by NXP Semiconductors

A2T26H300-24SR6

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
SD2904 by STMicroelectronics

SD2904

STMicroelectronics

SD2904 by STMicroelectronics is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. It operates in the ULTRA HIGH FREQUENCY BAND, with a max Drain Current of 5A. This SINGLE configuration transistor is commonly used as an AMPLIFIER in various applications due to its SILICON element material and ENHANCEMENT MODE operation.
TGI1314-50L by Toshiba

TGI1314-50L

Toshiba

Toshiba's TGI1314-50L is an N-channel RF Power FET with 50V DS breakdown voltage, ideal for KU band applications. Featuring a ceramic-metal sealed co-fired package, it operates in depletion mode with 15A drain current and 140W power dissipation at max 175°C temperature.
PD55015 by STMicroelectronics

PD55015

STMicroelectronics

PD55015 by STMicroelectronics is an N-CHANNEL RF Power FET for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY, with a max drain current of 5A and power dissipation of 73W. The transistor has a PLASTIC/EPOXY body, GULL WING terminals, and can withstand up to 165°C operating temperature.
AFT09MS015NT1 by NXP Semiconductors

AFT09MS015NT1

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3; Terminal Finish: TIN; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;
AFT05MS004NT1 by Freescale Semiconductor

AFT05MS004NT1

Freescale Semiconductor

RF Power Field-Effect Transistors; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Terminal Finish: MATTE TIN;
A5G35H055NT4 by NXP Semiconductors

A5G35H055NT4

NXP Semiconductors

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
A5G26H110N-2496 by NXP Semiconductors

A5G26H110N-2496

NXP Semiconductors

RF Power Field-Effect Transistors;
A2T23H160-24SR3 by NXP Semiconductors

A2T23H160-24SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
934061129112 by NXP Semiconductors

934061129112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON; Case Connection: SOURCE;