NXP Semiconductors - 935351522128

  1. Home
  2. NXP Semiconductors - 935351522128
935351522128 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number 935351522128
Description RF Power Field-Effect Transistors;
Datasheet 935351522128 Datasheet
In Stock2,027
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,027 - -

Popular Products

Category Top Products

FLL57MK by Sumitomo Electric Industries

FLL57MK

Sumitomo Electric Industries

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Highest Frequency Band: L BAND; No. of Terminals: 2;
RF2L36075CF2 by STMicroelectronics

RF2L36075CF2

STMicroelectronics

RF Power Field-Effect Transistors;
A2T07H310-24SR6 by NXP Semiconductors

A2T07H310-24SR6

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
RF5L051K0CB4 by STMicroelectronics

RF5L051K0CB4

STMicroelectronics

RF Power Field-Effect Transistors; Terminal Finish: Nickel/Gold/Cobalt (Ni/Au/Co); Moisture Sensitivity Level (MSL): 3;
MRF8S21200HSR6 by Freescale Semiconductor

MRF8S21200HSR6

Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 65 V; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 225 Cel;
PD55025S-E by STMicroelectronics

PD55025S-E

STMicroelectronics

STMicroelectronics PD55025S-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, suitable for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It features a max ID of 7A, 79W power dissipation, and operates in ENHANCEMENT MODE. The transistor has a small outline package style and can withstand temperatures up to 165°C.
PD84008TR-E by STMicroelectronics

PD84008TR-E

STMicroelectronics

PD84008TR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max power dissipation of 79 W.
DE275-501N16A by IXYS Corporation

DE275-501N16A

IXYS Corporation

DE275-501N16A by IXYS Corp is a N-channel RF Power FET with 500V DS breakdown voltage, 16A max drain current, and operates in the VHF band. It is used for switching applications in enhancement mode, featuring a plastic/epoxy package and isolated case connection.
MRF374 by Motorola

MRF374

Motorola

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Element Material: SILICON; No. of Elements: 2;
BLF878,112 by NXP Semiconductors

BLF878,112

NXP Semiconductors

NXP Semiconductors BLF878,112 is an N-CHANNEL RF Power FET with 2 elements for AMPLIFIER applications. It operates in the ULTRA HIGH FREQUENCY BAND, with a max power dissipation of 300W and a min DS breakdown voltage of 89V. The package style is FLANGE MOUNT, suitable for surface mount assembly at a max temp of 200°C.
SD2902 by STMicroelectronics

SD2902

STMicroelectronics

SD2902 by STMicroelectronics is an N-CHANNEL RF Power FET with a 65V DS Breakdown Voltage. It operates in the ULTRA HIGH FREQUENCY BAND, ideal for AMPLIFIER applications. Featuring a max Drain Current of 2.5A, this METAL-OXIDE SEMICONDUCTOR FET has a PLASTIC/EPOXY package and can withstand temperatures up to 200 °C.
PD57006TR-E by STMicroelectronics

PD57006TR-E

STMicroelectronics

PD57006TR-E by STMicroelectronics is an N-channel RF FET designed for amplifier applications. It features a max drain current of 1 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This surface-mount transistor excels in compact designs with high power dissipation up to 20 W.
PD57018TR-E by STMicroelectronics

PD57018TR-E

STMicroelectronics

PD57018TR-E by STMicroelectronics is an N-channel RF FET designed for amplifier applications, featuring a max drain current of 2.5 A and a breakdown voltage of 65 V. It operates in the ultra-high frequency band with a power dissipation of 31.7 W. This surface-mount transistor ensures reliable performance up to 165 °C.
MRFE6VS25GNR1 by Freescale Semiconductor

MRFE6VS25GNR1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Operating Mode: ENHANCEMENT MODE; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
LET20030C by STMicroelectronics

LET20030C

STMicroelectronics

LET20030C by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 65 V, and operates in the L band. This surface-mount transistor supports high efficiency with a max temp of 200 °C.
CGH40180PP by Wolfspeed

CGH40180PP

Wolfspeed

CGH40180PP by Wolfspeed is an N-CHANNEL RF Power FET with a 120V DS Breakdown Voltage. It operates in the S BAND frequency range and features Gallium Nitride technology. Ideal for amplifier applications, this transistor has a ceramic-metal-sealed co-fired package and is surface mountable.
PTVA101K02EVV1 by Wolfspeed

PTVA101K02EVV1

Wolfspeed

RF Power Field-Effect Transistors;
BLF246 by NXP Semiconductors

BLF246

NXP Semiconductors

The NXP Semiconductors BLF246 is an N-CHANNEL RF Power FET with a 65V DS Breakdown Voltage and 16dB Power Gain, ideal for AMPLIFIER applications in the VERY HIGH FREQUENCY BAND. Featuring a max Drain Current of 13A and a power dissipation of 130W, this METAL-OXIDE SEMICONDUCTOR device operates in ENHANCEMENT MODE at up to 200°C.
A2G35S160-01SR3 by NXP Semiconductors

A2G35S160-01SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
MRF136 by New Jersey Semiconductor Products

MRF136

New Jersey Semiconductor Products

N-CHANNEL; Configuration: SINGLE; Minimum DS Breakdown Voltage: 65 V; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;