NXP Semiconductors - 935358817598

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935358817598 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 935358817598
Description RF Power Field-Effect Transistors;
Datasheet 935358817598 Datasheet
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BLF177 by Asi Semiconductor

BLF177

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N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 220 W; Maximum Drain Current (ID): 16 A; Maximum Drain Current (Abs) (ID): 16 A;
BLF888D by Ampleon Netherlands B V

BLF888D

Ampleon Netherlands B V

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
MRFE6VP6300HR3 by Freescale Semiconductor

MRFE6VP6300HR3

Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Form: FLAT; Peak Reflow Temperature (C): 260; Case Connection: SOURCE;
BLF574 by Ampleon Netherlands B V

BLF574

Ampleon Netherlands B V

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Time At Peak Reflow Temperature (s): 30; No. of Elements: 2;
A3V07H600-42NR6 by NXP Semiconductors

A3V07H600-42NR6

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3;
A2T18S165-12SR3 by NXP Semiconductors

A2T18S165-12SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
BLF147 by Ampleon Netherlands B V

BLF147

Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Minimum DS Breakdown Voltage: 65 V; Terminal Form: FLAT;
PD84006L-E by STMicroelectronics

PD84006L-E

STMicroelectronics

STMicroelectronics PD84006L-E is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage, suitable for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It features a SINGLE configuration, 5A Drain Current, and 31W Power Dissipation in a PLASTIC/EPOXY package with NO LEAD terminals.
934065232118 by NXP Semiconductors

934065232118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; Package Style (Meter): FLATPACK;
MRF6S20010GNR1 by Freescale Semiconductor

MRF6S20010GNR1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 40;
AFT09H310-03SR6 by Freescale Semiconductor

AFT09H310-03SR6

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Maximum Time At Peak Reflow Temperature (s): 40; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1; Peak Reflow Temperature (C): 260;
ARF463AP1G by Microchip Technology

ARF463AP1G

Microchip Technology

Microchip Technology's ARF463AP1G is a N-CHANNEL RF Power FET with 500V DS Breakdown Voltage. Ideal for amplifier applications in the VHF band, it offers 9A Drain Current and 180W Power Dissipation. The transistor operates in ENHANCEMENT MODE with a max temperature of 150°C, featuring a SOURCE case connection.
PTFA080551EV4R250XTMA1 by Wolfspeed

PTFA080551EV4R250XTMA1

Wolfspeed

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: S-CDFM-F2; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
MRF1K50HR5 by NXP Semiconductors

MRF1K50HR5

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
AFT05MS006NT1 by NXP Semiconductors

AFT05MS006NT1

NXP Semiconductors

RF Power Field-Effect Transistors; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 40; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3;
934064686112 by NXP Semiconductors

934064686112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; JESD-30 Code: S-CQFM-F6; Minimum DS Breakdown Voltage: 65 V;
T2G6003028-FL by Triquint Semiconductor

T2G6003028-FL

Triquint Semiconductor

RF Power Field-Effect Transistors;
PD57018-E by STMicroelectronics

PD57018-E

STMicroelectronics

STMicroelectronics PD57018-E is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 2.5A Drain Current. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features ENHANCEMENT MODE operation, GULL WING terminals, and a SMALL OUTLINE package style.
PD85050STR by STMicroelectronics

PD85050STR

STMicroelectronics

RF Power Field-Effect Transistors;
STAP57045 by STMicroelectronics

STAP57045

STMicroelectronics

STAP57045 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max power dissipation of 73 W.