NXP Semiconductors - 935360891138

  1. Home
  2. NXP Semiconductors - 935360891138
935360891138 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number 935360891138
Description RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
Datasheet 935360891138 Datasheet
In Stock3,409
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): 40
Peak Reflow Temperature (C): 260
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,409 - -

Popular Products

Category Top Products

STAP85035 by STMicroelectronics

STAP85035

STMicroelectronics

STAP85035 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 8 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. Its compact flange mount design ensures efficient performance in demanding environments.
PD55025-E by STMicroelectronics

PD55025-E

STMicroelectronics

STMicroelectronics PD55025-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, ideal for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND, with 7A Drain Current and 79W Power Dissipation. Package: PLASTIC/EPOXY, GULL WING terminals, SMALL OUTLINE style.
934064628112 by NXP Semiconductors

934064628112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
D1028UK by Tt Electronics Plc

D1028UK

Tt Electronics Plc

D1028UK by Tt Electronics Plc is an N-CHANNEL RF Power FET with 70V DS Breakdown Voltage. It operates in the Ultra High Frequency Band, featuring a COMMON SOURCE configuration for AMPLIFIER applications. The package is RECTANGULAR, METAL-OXIDE SEMICONDUCTOR technology, and can withstand up to 200°C operating temperature.
LET9070CB by STMicroelectronics

LET9070CB

STMicroelectronics

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
A2T18H410-24SR6 by NXP Semiconductors

A2T18H410-24SR6

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
BLF640U by Ampleon Netherlands B V

BLF640U

Ampleon Netherlands B V

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
CLF1G0035S-100,112 by Ampleon Netherlands B V

CLF1G0035S-100,112

Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: GALLIUM NITRIDE; JESD-30 Code: R-CDFP-F2; Operating Mode: DEPLETION MODE;
AFT09S282NR3 by NXP Semiconductors

AFT09S282NR3

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; No. of Elements: 1; Maximum Operating Temperature: 150 Cel; Moisture Sensitivity Level (MSL): 3; Terminal Finish: TIN;
DE275-501N16A by IXYS Corporation

DE275-501N16A

IXYS Corporation

DE275-501N16A by IXYS Corp is a N-channel RF Power FET with 500V DS breakdown voltage, 16A max drain current, and operates in the VHF band. It is used for switching applications in enhancement mode, featuring a plastic/epoxy package and isolated case connection.
934064995118 by NXP Semiconductors

934064995118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1; Package Style (Meter): FLATPACK;
MRF1518NT1 by NXP Semiconductors

MRF1518NT1

NXP Semiconductors

NXP Semiconductors' MRF1518NT1 is a single N-channel RF Power FET for amplifier applications. It operates in enhancement mode with 40V DS breakdown voltage and 4A drain current. With a max power dissipation of 62.5W, it is designed for ultra-high frequency band usage.
SD57120 by STMicroelectronics

SD57120

STMicroelectronics

SD57120 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 14 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This versatile component is ideal for high-power amplification in compact designs.
CGHV40030P by Wolfspeed

CGHV40030P

Wolfspeed

CGHV40030P by Wolfspeed is an N-CHANNEL RF Power FET with a 150V DS Breakdown Voltage and 15dB Power Gain, ideal for AMPLIFIER applications in C BAND. Featuring Gallium Nitride technology, it operates from -40 to 85 °C with a max ID of 4.2A and Crss of 0.15pF in a METAL-SEALED COFIRED package.
MRFE6VP100HR5 by NXP Semiconductors

MRFE6VP100HR5

NXP Semiconductors

N-CHANNEL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
PD84006L-E by STMicroelectronics

PD84006L-E

STMicroelectronics

STMicroelectronics PD84006L-E is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage, suitable for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It features a SINGLE configuration, 5A Drain Current, and 31W Power Dissipation in a PLASTIC/EPOXY package with NO LEAD terminals.
D2225UK by Tt Electronics Plc

D2225UK

Tt Electronics Plc

D2225UK by Tt Electronics Plc is an N-CHANNEL RF Power FET with 2 elements in a COMMON SOURCE configuration. It operates in the ULTRA HIGH FREQUENCY BAND, with a max ID of 4A and VDS of 40V. Ideal for AMPLIFIER applications, this transistor has GULL WING terminals and can withstand up to 200°C operating temperature.
934065695118 by NXP Semiconductors

934065695118

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Case Connection: SOURCE; Package Style (Meter): FLANGE MOUNT; Operating Mode: ENHANCEMENT MODE;
BLP10H610Z by Ampleon Netherlands B V

BLP10H610Z

Ampleon Netherlands B V

BLP10H610Z by Ampleon Netherlands B V is an N-CHANNEL RF Power FET with a PLASTIC/EPOXY package. It operates in ENHANCEMENT MODE, suitable for AMPLIFIER applications in L BAND frequencies. With 104V DS Breakdown Voltage and max temp of 150°C, it features a COMMON SOURCE configuration and METAL-OXIDE SEMICONDUCTOR technology.
BLM6G22-30G,118 by NXP Semiconductors

BLM6G22-30G,118

NXP Semiconductors

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: Tin (Sn); Peak Reflow Temperature (C): 245;