NXP Semiconductors - 935362181598

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935362181598 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 935362181598
Description RF Power Field-Effect Transistors;
Datasheet 935362181598 Datasheet
In Stock655
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GS61004B-MR by Gan Systems is an N-CHANNEL RF FET with 100V DS breakdown voltage, 45A ID, and -55°C min. operating temp. Ideal for SWITCHING applications in ENHANCEMENT MODE, this PLASTIC/EPOXY chip carrier FET offers SOURCE case connection and GOLD over NICKEL terminal finish.
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LET21030C by STMicroelectronics

LET21030C

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LET21030C by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 65 V, and operates in the S band. This surface-mount transistor ensures efficient performance up to 200 °C.
PD57045TR-E by STMicroelectronics

PD57045TR-E

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PD57045TR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact surface-mount transistor ensures efficient performance with a max power dissipation of 73 W.
SD3932 by STMicroelectronics

SD3932

STMicroelectronics

SD3932 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 20 A, a breakdown voltage of 250 V, and operates in the ultra-high frequency band. This versatile transistor supports surface mount configurations and withstands temperatures up to 200 °C.
GS66516B-MR by Gan Systems

GS66516B-MR

Gan Systems

GS66516B-MR by Gan Systems is a P-CHANNEL FET for SWITCHING applications. With 650V DS Breakdown Voltage, it operates in ENHANCEMENT MODE at 60A ID. This RF transistor in CHIP CARRIER package offers VERY HIGH FREQUENCY performance.
A2T18H100-25SR3 by NXP Semiconductors

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RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
CGH40025P by Wolfspeed

CGH40025P

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CGH40025P by Wolfspeed is an N-CHANNEL RF Power FET with a CERAMIC, METAL-SEALED COFIRED package. It operates in ENHANCEMENT MODE for AMPLIFIER applications in the C BAND frequency range. Featuring GALLIUM NITRIDE technology, it has a 120V DS Breakdown Voltage and can withstand temperatures up to 175°C.
MRF374 by Motorola

MRF374

Motorola

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Element Material: SILICON; No. of Elements: 2;
SD2932 by STMicroelectronics

SD2932

STMicroelectronics

SD2932 by STMicroelectronics is an N-CHANNEL RF Power FET with a max drain current of 40A and power dissipation of 500W. It operates in the ultra-high frequency band, making it ideal for high-power applications like amplifiers and transmitters. The transistor features a metal-oxide semiconductor technology and can withstand temperatures up to 200°C.
A3T18H455W23SR6 by NXP Semiconductors

A3T18H455W23SR6

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NXP Semiconductors A3T18H455W23SR6 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage, 15dB Power Gain, and L BAND frequency. Ideal for AMPLIFIER applications, it operates in ENHANCEMENT MODE with a temperature range of -40 to 225 °C.
BLF6G15L-40RN by NXP Semiconductors

BLF6G15L-40RN

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED; Moisture Sensitivity Level (MSL): NOT APPLICABLE;
MRF186 by Freescale Semiconductor

MRF186

Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; JESD-30 Code: R-CDFM-F4; Terminal Position: DUAL; Package Shape: RECTANGULAR;
A5G35S004NT6 by NXP Semiconductors

A5G35S004NT6

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RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3;
AFT09MS015NT1 by NXP Semiconductors

AFT09MS015NT1

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3; Terminal Finish: TIN; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;
A2T18S162W31GSR3 by NXP Semiconductors

A2T18S162W31GSR3

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
PD20015C by STMicroelectronics

PD20015C

STMicroelectronics

PD20015C by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 40 V, and operates in the L band. This surface-mount transistor supports high power dissipation up to 93 W.
CGHV40030F by Wolfspeed

CGHV40030F

Wolfspeed

CGHV40030F by Wolfspeed is an N-CHANNEL RF Power FET with a 150V DS Breakdown Voltage and 15dB Power Gain, ideal for AMPLIFIER applications in C BAND. Featuring GALLIUM NITRIDE technology, it operates from -40 to 85 °C with a max ID of 4.2A and 0.15pF Crss for high-performance needs.
PD54003-E by STMicroelectronics

PD54003-E

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STMicroelectronics' PD54003-E is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage. It operates in Enhancement Mode for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. With a max ID of 4A and 52.8W power dissipation, it's ideal for high-power RF amplification needs.
934065972112 by NXP Semiconductors

934065972112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Package Style (Meter): FLATPACK; Transistor Application: AMPLIFIER;