NXP Semiconductors - 935373606598

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935373606598 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 935373606598
Description RF Power Field-Effect Transistors;
Datasheet 935373606598 Datasheet
In Stock3,139
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934065231112 by NXP Semiconductors

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Minimum DS Breakdown Voltage: 65 V; Transistor Element Material: SILICON;
MRF300AN-144MHZ by NXP Semiconductors

MRF300AN-144MHZ

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MRF134 by Asi Semiconductor

MRF134

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N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Minimum DS Breakdown Voltage: 65 V; Package Shape: ROUND; Maximum Drain Current (Abs) (ID): .9 A;
BLL6H1214-500,112 by Ampleon Netherlands B V

BLL6H1214-500,112

Ampleon Netherlands B V

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 100 V; Case Connection: SOURCE; Maximum Drain Current (ID): 45 A;
BLF246 by New Jersey Semiconductor Products

BLF246

New Jersey Semiconductor Products

N-CHANNEL; Configuration: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 65 V; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
MRF171A by Motorola

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Motorola

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 115 W; Package Shape: ROUND; No. of Elements: 1;
MRF6V10010NR4 by Freescale Semiconductor

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LET9045F by STMicroelectronics

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STMicroelectronics

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CGHV96100F2 by Wolfspeed

CGHV96100F2

Wolfspeed

CGHV96100F2 by Wolfspeed is an N-CHANNEL RF Power FET with 100V DS Breakdown Voltage, 10.5 dB Power Gain, and operates in DEPLETION MODE. Ideal for X BAND applications like AMPLIFIERS due to its GALLIUM NITRIDE technology and 12A Drain Current capacity.
LET9045 by STMicroelectronics

LET9045

STMicroelectronics

LET9045 by STMicroelectronics is an N-channel RF FET designed for amplifier applications, featuring a max drain current of 9 A and breakdown voltage of 80 V. It operates in the ultra-high frequency band with a power dissipation of up to 79 W. This compact surface mount device ensures efficient performance in demanding environments.
PD20010-E by STMicroelectronics

PD20010-E

STMicroelectronics

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STAC2942F by STMicroelectronics

STAC2942F

STMicroelectronics

STAC2942F by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 40 A, breakdown voltage of 130 V, and operates in the very high frequency band. Its robust ceramic-metal sealed package ensures reliability in demanding environments.
934061301112 by NXP Semiconductors

934061301112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Transistor Application: AMPLIFIER; Operating Mode: ENHANCEMENT MODE;
CGHV96050F2 by Wolfspeed

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Wolfspeed

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BLF278,112 by NXP Semiconductors

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NXP Semiconductors

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PD85025STR-E by STMicroelectronics

PD85025STR-E

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TGF4230-EPU by Texas Instruments

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934061249112 by NXP Semiconductors

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Application: AMPLIFIER; Package Style (Meter): FLANGE MOUNT;