NXP Semiconductors - 935432677528

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935432677528 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 935432677528
Description RF Power Field-Effect Transistors;
Datasheet 935432677528 Datasheet
In Stock1,847
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MRFE6VP5150GNR1 by NXP Semiconductors

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NXP Semiconductors' MRFE6VP5150GNR1 is an N-CHANNEL RF Power FET with 133V DS Breakdown Voltage. It operates in the Ultra High Frequency Band, featuring a COMMON SOURCE configuration for AMPLIFIER applications. The transistor has a PLASTIC/EPOXY package and GULL WING terminals, suitable for surface mount assembly.
MRF1513T1 by Motorola

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 31.2 W; Maximum Operating Temperature: 150 Cel; Package Style (Meter): CHIP CARRIER;
MRFE6VP5300NR1 by Freescale Semiconductor

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PD55035-E by STMicroelectronics

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PD60030 by STMicroelectronics

PD60030

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PD60030 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a 65V min DS breakdown voltage, operates in enhancement mode, and supports L band frequencies. Its compact surface mount design ensures efficient performance in various electronic devices.
SD2943 by STMicroelectronics

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SD2943 by STMicroelectronics is an N-CHANNEL RF Power FET with a 130V DS Breakdown Voltage. It operates in the ULTRA HIGH FREQUENCY BAND, with a max ID of 40A and 648W power dissipation. Ideal for AMPLIFIER applications due to its ENHANCEMENT MODE operation and SOURCE case connection.
TGF4212SCMX by Texas Instruments

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Texas Instruments

TGF4212SCMX by Texas Instruments is an N-CHANNEL RF Power FET for AMPLIFIER applications. Features include 10V DS Breakdown Voltage, DEPLETION MODE operation, and KU BAND frequency band. This RECTANGULAR chip with GALLIUM ARSENIDE technology has 4 terminals and is surface mountable.
CLF1G0035S-100 by NXP Semiconductors

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BLP10H610Z by Ampleon Netherlands B V

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Ampleon Netherlands B V

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TIM3742-8UL by Toshiba

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Toshiba

Toshiba's TIM3742-8UL is an N-channel RF Power FET with a 15V DS breakdown voltage, ideal for amplifier applications in the C band. Featuring a single configuration, it has a max drain current of 7A and operates in depletion mode. With a package style of flange mount and metal-oxide semiconductor technology, it offers high power dissipation up to 37.5W at a max temp of 175°C.
MW6S010GNR1 by Freescale Semiconductor

MW6S010GNR1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 61.4 W; Package Style (Meter): SMALL OUTLINE; JESD-30 Code: R-PDSO-G2;
GS66508T-MR by Gan Systems

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Gan Systems

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A2I22D050GNR1 by NXP Semiconductors

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934056499112 by NXP Semiconductors

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N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Form: FLAT; Package Style (Meter): FLANGE MOUNT; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
FLU35XM by Fujitsu Semiconductor America

FLU35XM

Fujitsu Semiconductor America

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 15 V; Terminal Position: QUAD;
PD84010TR-E by STMicroelectronics

PD84010TR-E

STMicroelectronics

PD84010TR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 8 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max power dissipation of 95 W.
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CGHV96100F2

Wolfspeed

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AFT26H250-24SR6 by Freescale Semiconductor

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Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Maximum Time At Peak Reflow Temperature (s): 40; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1; Maximum Operating Temperature: 225 Cel;