NXP Semiconductors - 935442486528

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935442486528 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 935442486528
Description RF Power Field-Effect Transistors;
Datasheet 935442486528 Datasheet
In Stock1,791
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SD2918 by STMicroelectronics is an N-CHANNEL RF Power FET with 125V DS Breakdown Voltage and 6A Drain Current. It operates in the Ultra High Frequency Band, suitable for high-power applications. With a max power dissipation of 175W and operating temperature up to 200 °C, it is ideal for demanding RF power amplification needs.
BLF861 by NXP Semiconductors

BLF861

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BLF861 by NXP is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It features COMMON SOURCE configuration, 18A ID, and METAL-OXIDE SEMICONDUCTOR technology in a CERAMIC package with FLANGE MOUNT style.
934065672112 by NXP Semiconductors

934065672112

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N-CHANNEL; Configuration: SINGLE; Transistor Element Material: SILICON; Highest Frequency Band: L BAND; Transistor Application: AMPLIFIER; Operating Mode: ENHANCEMENT MODE;
PTVA101K02EVV1XWSA1 by Infineon Technologies

PTVA101K02EVV1XWSA1

Infineon Technologies

Infineon's PTVA101K02EVV1XWSA1 is an N-CHANNEL RF Power FET with 105V DS Breakdown Voltage. It features COMMON SOURCE configuration, suitable for AMPLIFIER applications in L BAND frequency range. This METAL-OXIDE SEMICONDUCTOR FET operates at up to 225°C and comes in a FLANGE MOUNT package style.
PD55008 by STMicroelectronics

PD55008

STMicroelectronics

STMicroelectronics PD55008 is an N-CHANNEL RF Power FET with 40V DS breakdown voltage, ideal for amplifier applications in the UHF band. It features a single configuration, GULL WING terminals, and operates in enhancement mode. With 4A max drain current and 52.8W power dissipation, it offers high performance in a small outline package.
A3T23H450W23SR6 by NXP Semiconductors

A3T23H450W23SR6

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RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
VRF151G by Microsemi

VRF151G

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N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Terminal Finish: TIN SILVER COPPER; No. of Terminals: 4;
934056639112 by NXP Semiconductors

934056639112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Case Connection: SOURCE; Package Style (Meter): FLANGE MOUNT;
A2T23H300-24SR6 by NXP Semiconductors

A2T23H300-24SR6

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
934065239112 by NXP Semiconductors

934065239112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Position: DUAL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 4;
PD55025 by STMicroelectronics

PD55025

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STMicroelectronics PD55025 is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage and 7A Drain Current. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, it features a PLASTIC/EPOXY package, GULL WING terminals, and operates in ENHANCEMENT MODE up to 165°C.
934064591118 by NXP Semiconductors

934064591118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Package Style (Meter): FLANGE MOUNT; Minimum DS Breakdown Voltage: 65 V;
A3T23H300W23SR6 by NXP Semiconductors

A3T23H300W23SR6

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
934064628118 by NXP Semiconductors

934064628118

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Transistor Application: AMPLIFIER; JESD-30 Code: R-CDFP-F2;
A2T18S166W12SR3 by NXP Semiconductors

A2T18S166W12SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
A3V26S004NT6 by NXP Semiconductors

A3V26S004NT6

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Peak Reflow Temperature (C): 260; Operating Mode: ENHANCEMENT MODE;
934061276135 by NXP Semiconductors

934061276135

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 4; Package Style (Meter): FLANGE MOUNT;
MRF8HP21130HSR3 by NXP Semiconductors

MRF8HP21130HSR3

NXP Semiconductors

NXP Semiconductors' MRF8HP21130HSR3 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. It operates in S BAND, featuring COMMON SOURCE configuration for AMPLIFIER applications. The package is RECTANGULAR, METAL-OXIDE SEMICONDUCTOR technology, and can withstand a peak reflow temperature of 260°C for 40s.
MRF151G by Asi Semiconductor

MRF151G

Asi Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Transistor Element Material: SILICON; Maximum Drain Current (Abs) (ID): 40 A;
934056519112 by NXP Semiconductors

934056519112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Case Connection: SOURCE; Package Style (Meter): FLANGE MOUNT; Terminal Position: DUAL;