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Manufacturer | NXP Semiconductors |
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Manufacturer's Part Number | A2G22S251-01SR3 |
Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Peak Reflow Temperature (C): 260; Terminal Position: DUAL; |
Datasheet | A2G22S251-01SR3 Datasheet |
In Stock | 58 |
NAME | DESCRIPTION |
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Minimum Power Gain (Gp): | 16.2 dB |
Package Body Material: | CERAMIC, METAL-SEALED COFIRED |
Maximum Time At Peak Reflow Temperature (s): | 40 |
Configuration: | SINGLE |
Transistor Element Material: | GALLIUM NITRIDE |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | AMPLIFIER |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
Minimum Operating Temperature: | -55 Cel |
No. of Terminals: | 2 |
Minimum DS Breakdown Voltage: | 150 V |
Terminal Position: | DUAL |
Package Style (Meter): | FLATPACK |
JESD-30 Code: | R-CDFP-F2 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | FLAT |
Operating Mode: | DEPLETION MODE |
Highest Frequency Band: | S BAND |
Maximum Operating Temperature: | 225 Cel |
Peak Reflow Temperature (C): | 260 |