NXP Semiconductors - A2G26H281-04SR3

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A2G26H281-04SR3 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number A2G26H281-04SR3
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Minimum Operating Temperature: -55 Cel; JESD-30 Code: R-CDFP-F4; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
Datasheet A2G26H281-04SR3 Datasheet
In Stock135
NAME DESCRIPTION
Minimum Power Gain (Gp): 12.9 dB
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SEPARATE, 2 ELEMENTS
Transistor Element Material: GALLIUM NITRIDE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Minimum Operating Temperature: -55 Cel
No. of Terminals: 4
Minimum DS Breakdown Voltage: 150 V
Terminal Position: DUAL
Package Style (Meter): FLATPACK
JESD-30 Code: R-CDFP-F4
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: DEPLETION MODE
Highest Frequency Band: S BAND
Maximum Operating Temperature: 225 Cel
Peak Reflow Temperature (C): 260
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