NXP Semiconductors - A2I08H040GNR1

  1. Home
  2. NXP Semiconductors - A2I08H040GNR1
A2I08H040GNR1 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number A2I08H040GNR1
Description NARROW BAND HIGH POWER; Terminal Finish: TIN; JESD-609 Code: e3;
Datasheet A2I08H040GNR1 Datasheet
In Stock413
NAME DESCRIPTION
RF or Microwave Device Type: NARROW BAND HIGH POWER
Terminal Finish: TIN
JESD-609 Code: e3
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
413 $7.600 $3,138.800

Popular Products

Category Top Products

MGA-61563-BLKG by Broadcom

MGA-61563-BLKG

Broadcom

Broadcom's MGA-61563-BLKG is a GAAS RF amplifier with 6.9dB gain, operating from 100MHz to 6GHz. It has a max input power of 18dBm and VSWR of 2, suitable for wideband low-power applications in RF & microwave systems. With a compact plastic/epoxy package and surface mounting feature, it offers high performance with 48mA supply current at 3/5V.
QPA1011D by Qorvo

QPA1011D

Qorvo

WIDE BAND HIGH POWER;
HMC751LC4TR by Analog Devices

HMC751LC4TR

Analog Devices

HMC751LC4TR by Analog Devices is a wide band low power RF amplifier with 22 dB gain. It operates from 17-27 GHz, ideal for microwave applications. Featuring a ceramic package, it has a max input power of -5 dBm and requires 4V supply voltage.
AMMP-6220-BLK by Broadcom

AMMP-6220-BLK

Broadcom

AMMP-6220-BLK by Broadcom is a wide band low power RF amplifier with a gain of 22 dB. It operates at frequencies ranging from 6 GHz to 20 GHz and has a max input power of 15 dBm. This surface mount component is commonly used in RF and microwave applications.
CMD317C4 by Qorvo

CMD317C4

Qorvo

WIDE BAND LOW POWER;
SPF5043Z by Qorvo

SPF5043Z

Qorvo

Qorvo's SPF5043Z is a GAAS RF amplifier with 11.4 dB gain, operating from 50 MHz to 4000 MHz. It has a max input power of 25 dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems. The component is designed for surface mounting with a characteristic impedance of 50 ohms.
HMC372LP3ETR by Hittite Microwave

HMC372LP3ETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;
PTMA180402M-V1-R500 by Wolfspeed

PTMA180402M-V1-R500

Wolfspeed

NARROW BAND HIGH POWER;
MBC13916NT1 by NXP Semiconductors

MBC13916NT1

NXP Semiconductors

NXP Semiconductors' MBC13916NT1 is a BICMOS wide band low power RF amplifier with 9.5 dB gain and 50 ohm impedance. It operates from 100 MHz to 2500 MHz, handling up to 10 dBm input power. Ideal for applications requiring compact, high-performance RF amplification in plastic/epoxy packages.
BGU7004,115 by NXP Semiconductors

BGU7004,115

NXP Semiconductors

The NXP Semiconductors BGU7004,115 is a RF & Microwave Amplifier with 6 terminals and AEC-Q100 screening. Operating voltage of 1.8V, max supply current of 14.4mA, and temp range from -40 to 125°C make it ideal for automotive applications. Its surface mount package body material is plastic/epoxy with tin terminal finish.
ERA-50SM+ by Mini-circuits

ERA-50SM+

Mini-circuits

ERA-50SM+ by Mini-circuits is a wide band low power RF amplifier with 16 dB gain, operating from 0 to 1500 MHz. It has a max input power of 13 dBm and VSWR of 1.2, making it ideal for RF & microwave applications requiring surface mount amplification in the temperature range of -45 to 85°C.
PTMA080152MV1AUMA1 by Infineon Technologies

PTMA080152MV1AUMA1

Infineon Technologies

Infineon's PTMA080152MV1AUMA1 is a wide band high power RF amplifier with 29 dB gain, 42 dBm CW input power, and VSWR of 10. Ideal for applications requiring amplification in the frequency range of 700-1000 MHz.
HMC564LC4TR by Hittite Microwave

HMC564LC4TR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Maximum Input Power (CW): 5 dBm;
MAX2244EBL-T by Maxim Integrated

MAX2244EBL-T

Maxim Integrated

MAX2244EBL-T by Maxim Integrated is a RF amplifier with 10 dBm CW input power, 6 VSWR, and 3V supply. It operates b/w -40 to 85°C, ideal for narrow band low power applications in the frequency range of 2400-2500 MHz. The component has a surface mount package with 9 terminals and requires a max current of 205 mA.
HMC465LP5E by Hittite Microwave

HMC465LP5E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm;
SGA-3363 by Rf Micro Devices

SGA-3363

Rf Micro Devices

SGA-3363 by RF Micro Devices is a wide band low power RF amplifier with 15.5 dB gain and 50 ohm impedance. It operates from 0 to 5500 MHz, has a max input power of 18 dBm, and requires a 2.6V power supply. This component is ideal for applications requiring high-frequency signal amplification in compact electronic devices.
SST12LP08-QXBE by Silicon Storage Technology

SST12LP08-QXBE

Silicon Storage Technology

NARROW BAND MEDIUM POWER; Maximum Input Power (CW): 5 dBm; Additional Features: HIGH RELIABILITY; Maximum Operating Frequency: 2484 MHz; Gain: 29 dB; Maximum Operating Temperature: 85 Cel;
MGA-62563-BLK by Broadcom

MGA-62563-BLK

Broadcom

Broadcom's MGA-62563-BLK is a GAAS RF amplifier with 13dB gain, operating from 100MHz to 3GHz. It has a max input power of 21dBm and VSWR of 2, suitable for wideband low-power applications. The component features surface mounting and operates on 3/5V supplies with a max current draw of 77mA.
SGA-3563Z by Sirenza Microdevices

SGA-3563Z

Sirenza Microdevices

SGA-3563Z by Sirenza Microdevices is a wide band low power RF amplifier with 19.5 dB gain and 50 ohm impedance. It operates from 0 to 5000 MHz, with a max input power of 18 dBm. Ideal for applications requiring surface mount components in RF & microwave systems.
TGA2526 by Triquint Semiconductor

TGA2526

Triquint Semiconductor

WIDE BAND LOW POWER; Technology: GAAS; Gain: 17.5 dB; Minimum Operating Frequency: 2000 MHz; Construction: COMPONENT; Maximum Operating Frequency: 20000 MHz;