NXP Semiconductors - A3M36SL037S

NARROW BAND MEDIUM POWER; Maximum Input Power (CW): 29 dBm; Minimum Operating Frequency: 130 MHz; Characteristic Impedance: 50 ohm; Gain: 28.7 dB; Maximum Operating Frequency: 1000 MHz;

HMC516LC5TR by Analog Devices is a GAAS wide band low power RF amplifier with 1 function and 32 terminals. It operates at temperatures ranging from -40 to 85°C and requires a power supply of 3V, drawing a max current of 88mA. This surface mount package is suitable for various RF and microwave applications.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Gain: 14 dB;

NARROW BAND MEDIUM POWER; Maximum Input Power (CW): 5 dBm; Additional Features: HIGH RELIABILITY; Maximum Operating Frequency: 2484 MHz; Gain: 29 dB; Maximum Operating Temperature: 85 Cel;

Qorvo's QPA1003P is a GAN RF amplifier with 31.4 dB gain, operating from 1-8 GHz. It handles up to 18 dBm CW input power, VSWR of 3, and requires 28V supply. Ideal for wideband high-power applications in RF & microwave systems.

Broadcom's MGA-632P8-BLKG is a GAAS technology RF amplifier with 16dB gain, operating from 1400MHz to 3800MHz. It has a max input power of 20dBm and is ideal for wideband low-power applications. The component features surface mounting and matte tin terminal finish on an 8-terminal plastic/epoxy package body.

SST12LP08-QXBE by Microchip is a RF amplifier with 29 dB gain, operating frequency range of 2412-2484 MHz, and 5 dBm max input power. It is designed for narrow band medium power applications, featuring a 50 ohm characteristic impedance and surface mounting feature.

Analog Devices' HMC5805ALS6 is a wide band low power RF amplifier with 9 dB gain and 50 ohm impedance. It operates from 0 to 40 GHz, handling up to 22 dBm CW input power. Ideal for applications requiring high frequency amplification in extreme temperature environments.

Mitsubishi Electric's M57710-A is a hybrid module for RF applications. With 26 dBm CW input power, it operates in the narrow band from 156-160 MHz. Featuring a max VSWR of 2.8, it is suitable for high-power amplification in various communication systems.

Broadcom's MGA-545P8-TR1 is a GAAS RF amplifier with 10.5 dB gain, operating from 50 MHz to 7 GHz. It has a max input power of 20 dBm and operates on a 3.3V power supply. This wide band medium power amplifier is ideal for applications requiring surface mount construction in RF & microwave systems.

HMC475ST89ETR by Analog Devices is a wide band low power RF amplifier with 9 dB gain and 50 ohm impedance. It operates from 0 to 4500 MHz, handling up to 17 dBm CW input power. This component is ideal for RF and microwave applications requiring surface mount construction in temperatures ranging from -40°C to 85°C.

NXP Semiconductors' BGM1013,115 is a wide band low power RF amplifier with 24 dB gain and 100-3000 MHz frequency range. It operates at -40 to 85°C, draws 33 mA at 5V, and has a max input power of -10 dBm. This component is ideal for applications requiring surface mount amplifiers in the RF & Microwave field.

MAX2630EUS-T by Maxim Integrated is a wide band low power RF amplifier with 11dB gain, operating from 800MHz to 1GHz. It has a max input power of 5dBm and VSWR of 1.25, suitable for applications requiring surface mount construction in RF & microwave systems.

Qorvo's TGA4803 is a wide band medium power RF amplifier with 8 dB gain and 18 dBm CW input power. Operating from 0-50000 MHz, it is ideal for various RF applications requiring high performance amplification in components.

Analog Devices' HMC952ALP5GE is a wide band medium power RF amplifier with 28 dB gain, operating from 8-14 GHz. It has a max input power of 24 dBm and operates on a 6V supply. Ideal for RF & microwave applications requiring high performance in plastic/epoxy package.

Qorvo's NBB-400-D is a wide band low power RF amplifier with 15.5 dB gain, suitable for frequencies ranging from 0 to 8000 MHz. It can handle up to 20 dBm CW input power and has a VSWR of 1.9, making it ideal for various RF and microwave applications. Operating temperatures range from -45°C to 85°C, with a characteristic impedance of 50 ohms.

Analog Devices' MAX2232EEE+ is a RF amplifier with 23.9 dB gain, operating b/w 800-1000 MHz. It has a max input power of 10 dBm and VSWR of 1.5, ideal for narrowband medium power applications in temperatures ranging from -40 to 85°C.

NXP Semiconductors' MW7IC2725NBR1 is a 50 ohm RF amplifier with 25.5 dB gain, operating from 2300-2700 MHz. It can handle up to 22 dBm CW input power and has a VSWR of 10, making it ideal for narrowband high-power applications in RF and microwave systems.

HMC409LP4ETR by Analog Devices is a RF amplifier with 28 dB gain, operating frequency range of 3.3-3.8 GHz, and max input power of 10 dBm. It is designed for narrowband medium power applications in RF & microwave systems requiring a characteristic impedance of 50 ohms. The component features a surface mount package body material made of plastic/epoxy, suitable for temperatures ranging from -40 to 85°C.

SGA2463Z by Qorvo is a wide band low power RF amplifier with 18 dB gain and 50 ohm impedance. It operates from 0 to 5000 MHz, with a max input power of 18 dBm. This component is ideal for RF and microwave applications requiring surface mount construction.