NXP Semiconductors - A3M39SL039S

  1. Home
  2. NXP Semiconductors - A3M39SL039S
A3M39SL039S by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number A3M39SL039S
Description NARROW BAND LOW POWER;
Datasheet A3M39SL039S Datasheet
In Stock128
NAME DESCRIPTION
RF or Microwave Device Type: NARROW BAND LOW POWER
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
128 - -

Popular Products

Category Top Products

CMPA801B030S by Wolfspeed

CMPA801B030S

Wolfspeed

WIDE BAND HIGH POWER;
HMC998ALP5E by Analog Devices

HMC998ALP5E

Analog Devices

WIDE BAND MEDIUM POWER;
NBB-300-T1 by Qorvo

NBB-300-T1

Qorvo

Qorvo's NBB-300-T1 is a ceramic RF amplifier with 20 dBm CW input power, 2.5 VSWR, and 9 dB gain. Ideal for wideband low-power applications from 0 to 12000 MHz, it operates b/w -45°C to +85°C temperatures and requires a 3.9V power supply.
CMD283C3 by Custom Mmic Design Services

CMD283C3

Custom Mmic Design Services

WIDE BAND LOW POWER; Maximum Operating Frequency: 6000 MHz; Maximum Input Power (CW): 20 dBm; Gain: 18 dB; Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au); Construction: COMPONENT;
HMC561LP3E by Hittite Microwave

HMC561LP3E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;
HMC871LC5 by Hittite Microwave

HMC871LC5

Hittite Microwave

WIDE BAND LOW POWER; Maximum Input Power (CW): 10 dBm; Construction: COMPONENT; JESD-609 Code: e4; Gain: 10 dB; Maximum Operating Frequency: 20000 MHz;
AH202-F by Wj Communications

AH202-F

Wj Communications

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 28; Package Body Material: PLASTIC/EPOXY; Gain: 14 dB; Terminal Finish: Matte Tin (Sn);
CMA-83LN+ by Mini-circuits

CMA-83LN+

Mini-circuits

CMA-83LN+ by Mini-circuits is a wide band low power RF amplifier with 18.5 dB gain, operating from 500 MHz to 8000 MHz. It has a max input power of 16 dBm and VSWR of 1.19, suitable for surface mount applications in RF & microwave systems requiring high performance amplification.
HMC637ALP5ETR by Analog Devices

HMC637ALP5ETR

Analog Devices

Analog Devices' HMC637ALP5ETR is a wide band medium power RF amplifier with 12 dB gain and 25 dBm CW input power. Operating from -40 to 85°C, it covers frequencies from 0 to 6000 MHz. Ideal for RF and microwave applications requiring high performance in a compact component package.
1214-800P by Microsemi

1214-800P

Microsemi

RF/Microwave Amplifiers; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Package Equivalence Code: MODULE(UNSPEC); Power Supplies (V): 50;
PGA-102+ by Mini-circuits

PGA-102+

Mini-circuits

The Mini-circuits PGA-102+ is a wide band low power RF amplifier with 14.4 dB gain, operating from 50 MHz to 6 GHz. It has a max input power of 28 dBm and operates on a 3.3V supply, making it suitable for various RF and microwave applications requiring amplification in the frequency range of 50-6000 MHz.
MAX2659ELT+T by Analog Devices

MAX2659ELT+T

Analog Devices

Analog Devices' MAX2659ELT+T is a BICMOS RF amplifier with 1.8/3V supplies, 6 terminals, and 5.6mA max supply current. It operates b/w -40°C to 85°C, features gold nickel terminal finish, and is ideal for surface mount applications in RF & microwave circuits.
CA70-2 by M/a-com Technology Solutions

CA70-2

M/a-com Technology Solutions

CA70-2 by M/a-com Technology Solutions is a wide band low power RF amplifier with 7 dB gain. It operates b/w 10-250 MHz, handling up to 13 dBm CW input power. With a VSWR of 2.1, it's ideal for applications requiring coaxial construction in temperatures ranging from 0-50°C.
MGA-31689-TR1G by Broadcom

MGA-31689-TR1G

Broadcom

Broadcom's MGA-31689-TR1G is a GAAS RF amplifier with 16.6 dB gain, operating from 1500 to 3000 MHz. It has a max input power of 15 dBm and requires a 5V power supply. Ideal for wideband medium-power applications due to its surface-mount construction and characteristic impedance of 50 ohms.
LMV221SDX/NOPB by National Semiconductor

LMV221SDX/NOPB

National Semiconductor

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Terminal Finish: Matte Tin (Sn); Maximum Operating Temperature: 85 Cel;
MW7IC930NR1 by NXP Semiconductors

MW7IC930NR1

NXP Semiconductors

The NXP Semiconductors MW7IC930NR1 is a MOS RF amplifier with 33 dB gain, operating b/w 920-960 MHz. It has a max input power of 20 dBm and VSWR of 10, suitable for narrowband high-power applications at 28V supply voltage.
HMC994ALP5E by Analog Devices

HMC994ALP5E

Analog Devices

HMC994ALP5E by Analog Devices is a PHEMT RF amplifier with 11 dB gain, operating up to 28 GHz. It features a max supply current of 300 mA and is designed for wideband medium power applications in a surface mount package with 32 terminals.
HMC506LP4TR by Hittite Microwave

HMC506LP4TR

Hittite Microwave

NARROW BAND LOW POWER;
HMC478MP86ETR by Analog Devices

HMC478MP86ETR

Analog Devices

Analog Devices' HMC478MP86ETR is a wide band low power RF amplifier with 5V power supply, operating from -40°C to 85°C. This bipolar technology device has 4 terminals and surface mounting feature, making it ideal for RF & microwave applications requiring high performance in a compact package.
RFPA3800TR7 by Rf Micro Devices

RFPA3800TR7

Rf Micro Devices

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Additional Features: LOW NOISE;