NXP Semiconductors - A3M40PD012T7

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -40 Cel;

WIDE BAND LOW POWER; Terminal Finish: Matte Tin (Sn); Minimum Operating Frequency: 7100 MHz; Minimum Operating Temperature: -40 Cel; Maximum Voltage Standing Wave Ratio: 2; Construction: COMPONENT;

NPA1006A by M/a-com Technology Solutions is a wide band high power RF amplifier with 12.5 dB gain, operating from 20 MHz to 1000 MHz. It features a max VSWR of 15 and operates on a 28V power supply, suitable for surface mount applications in RF & microwave systems.

Analog Devices' HMC441LH5TR is a GAAS RF amplifier with 12 terminals, operating from -40 to 85°C. It has a power supply of 5V and max current draw of 115mA. Ideal for wideband medium-power applications, this surface-mount device offers reliable performance in RF and microwave systems.

Mini-circuits' ZX60-P103LN+ is a COAXIAL RF amplifier with 4.5 dB Gain, 50-3000 MHz frequency range, and 21 dBm CW power input. Ideal for wideband low-power applications, it offers a VSWR of 1.8 and operates b/w -40°C to 85°C temperature range.

Analog Devices' HMC1114PM5ETR is a GaN wide band high power RF amplifier with 31 dB gain, operating from 2.7 GHz to 3.8 GHz. It has a max input power of 18 dBm and VSWR of 6, suitable for applications requiring high power amplification in the RF & Microwave field. The component features a surface mount package body material made of plastic/epoxy, with a max supply current of 150 mA at 28V.

HMC952ALP5GETR by Analog Devices is a wide band medium power RF amplifier with 28 dB gain, operating from 8-14 GHz. It can handle up to 24 dBm CW input power and operates b/w -55°C to +85°C. Ideal for RF and microwave applications requiring high gain and broad frequency coverage.

Analog Devices' HMC799LP3E is a wide band low power RF amplifier with 42 dB gain. Operating from -40°C to 85°C, it covers frequencies from 0 MHz to 700 MHz. Ideal for RF and microwave applications requiring high performance in a compact component package.

NARROW BAND LOW POWER;

NARROW BAND LOW POWER; JESD-609 Code: e3; Terminal Finish: MATTE TIN;

HMC8412LP2FETR by Analog Devices is a wide band low power RF amplifier with 12 dB gain, operating from 400 MHz to 11 GHz. It has a max input power of 25 dBm and VSWR of 1.375, suitable for applications requiring high frequency amplification in RF & microwave systems. With a compact surface mount construction and operating temperatures from -40°C to 85°C, it offers reliable performance in various environments.

WIDE BAND HIGH POWER; JESD-609 Code: e3; Maximum Input Power (CW): 25 dBm; Minimum Operating Temperature: -40 Cel; Terminal Finish: Matte Tin (Sn); Construction: COMPONENT;

Analog Devices' HMC565LC5 is a wide band low power RF amplifier with 16 dB gain and 50 ohm impedance. Operating from 6-20 GHz, it handles up to 10 dBm CW input power. Ideal for applications requiring high frequency amplification in compact designs.

NARROW BAND LOW POWER;

HMC907APM5E by Analog Devices is a wide band medium power RF amplifier with 12 dB gain and 25 dBm max input power. It operates from 200 MHz to 22 GHz, has a VSWR of 7, and requires a 10V supply. Ideal for RF & microwave applications requiring high performance in plastic/epoxy package.

SP9711 by Api Technologies is a wide band low power RF amplifier with 10 dB gain. It operates b/w 1000-2000 MHz, handles up to 10 dBm CW input power, and has a VSWR of 2. Ideal for applications requiring high frequency amplification in temperatures ranging from -55 to 85°C.

Analog Devices' HMC564LC4 is a wideband low power RF amplifier with 14dB gain, operating from 7-14GHz. It has a max input power of 20dBm and operates on a 3V supply, drawing 75mA. This ceramic-packaged component is ideal for high-frequency applications requiring surface mount installation.

WIDE BAND MEDIUM POWER; Terminal Finish: Matte Tin (Sn); Maximum Operating Frequency: 6000 MHz; Construction: COMPONENT; Minimum Operating Frequency: 0 MHz; Minimum Operating Temperature: -40 Cel;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Construction: COMPONENT;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 5;