NXP Semiconductors - A5G35S008NT6

  1. Home
  2. NXP Semiconductors - A5G35S008NT6
A5G35S008NT6 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number A5G35S008NT6
Description RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3;
Datasheet A5G35S008NT6 Datasheet
In Stock2,043
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): 40
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 3
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,043 - -

Popular Products

Category Top Products

PD57045TR-E by STMicroelectronics

PD57045TR-E

STMicroelectronics

PD57045TR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact surface-mount transistor ensures efficient performance with a max power dissipation of 73 W.
CLF1G0035S-100 by NXP Semiconductors

CLF1G0035S-100

NXP Semiconductors

RF Power Field-Effect Transistors;
BLF3G21-30,112 by Ampleon Netherlands B V

BLF3G21-30,112

Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; Maximum Drain Current (ID): 4.5 A; Package Style (Meter): FLANGE MOUNT;
MRF8S9200NR3 by NXP Semiconductors

MRF8S9200NR3

NXP Semiconductors

NXP Semiconductors' MRF8S9200NR3 is an N-CHANNEL RF Power FET for ULTRA HIGH FREQUENCY BAND applications. It operates in ENHANCEMENT MODE with a 70V DS Breakdown Voltage and can handle up to 225°C temperature, making it suitable for AMPLIFIER circuits.
A2T08VD021NT1 by NXP Semiconductors

A2T08VD021NT1

NXP Semiconductors

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 40; Terminal Finish: Tin (Sn);
MRF184 by Freescale Semiconductor

MRF184

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Terminal Form: FLAT; Qualification: Not Qualified;
AFT09H310-04GSR6 by NXP Semiconductors

AFT09H310-04GSR6

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Maximum Operating Temperature: 225 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260; No. of Elements: 1;
AFT26H250-24SR6 by NXP Semiconductors

AFT26H250-24SR6

NXP Semiconductors

NXP Semiconductors' AFT26H250-24SR6 is an N-CHANNEL RF Power FET with METAL-OXIDE SEMICONDUCTOR tech. It operates up to 225°C, withstands peak reflow at 260°C for 40s. Ideal for high-power RF applications in various industries.
PD60004 by STMicroelectronics

PD60004

STMicroelectronics

PD60004 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a min DS breakdown voltage of 65V, operates in the L band, and supports surface mount with a compact SO package. This transistor excels in high-frequency performance up to 165 °C.
BLF888BS,112 by Ampleon Netherlands B V

BLF888BS,112

Ampleon Netherlands B V

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Package Style (Meter): FLATPACK; Terminal Position: DUAL;
RF5L0912750CB4 by STMicroelectronics

RF5L0912750CB4

STMicroelectronics

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Terminal Finish: Nickel/Gold/Cobalt (Ni/Au/Co);
CGHV40050P by Wolfspeed

CGHV40050P

Wolfspeed

CGHV40050P by Wolfspeed is an N-CHANNEL RF Power FET with a 150V DS Breakdown Voltage. Ideal for S BAND applications, it operates in DEPLETION MODE with a max ID of 6.3A and Crss of 0.3pF.
A2T21H450W19SR6 by NXP Semiconductors

A2T21H450W19SR6

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
LET9060 by STMicroelectronics

LET9060

STMicroelectronics

LET9060 by STMicroelectronics is an N-CHANNEL RF Power FET with 80V DS Breakdown Voltage. It operates in ULTRA HIGH FREQUENCY BAND, ideal for AMPLIFIER applications. Featuring a 12A ID and GULL WING terminals, it's a SINGLE configuration transistor in PLASTIC/EPOXY package.
A5G35S008NT6 by NXP Semiconductors

A5G35S008NT6

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3;
A3V09H521-24SR6 by NXP Semiconductors

A3V09H521-24SR6

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
MRF1513T1 by Tyco Electronics M/a-com

MRF1513T1

Tyco Electronics M/a-com

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-PQCC-N4; Transistor Element Material: SILICON; Package Style (Meter): CHIP CARRIER;
BLF861A by New Jersey Semiconductor Products

BLF861A

New Jersey Semiconductor Products

N-CHANNEL; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Minimum DS Breakdown Voltage: 65 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; No. of Elements: 2;
PD57070-E by STMicroelectronics

PD57070-E

STMicroelectronics

STMicroelectronics' PD57070-E is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 7A Drain Current. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features a PLASTIC/EPOXY package, SINGLE configuration, and operates in ENHANCEMENT MODE at up to 165°C.
PD85050STR by STMicroelectronics

PD85050STR

STMicroelectronics

RF Power Field-Effect Transistors;