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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | A5G37H110NT4 |
| Description | N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Operating Mode: DEPLETION MODE; Maximum Operating Temperature: 150 Cel; Terminal Position: DUAL; |
| Datasheet | A5G37H110NT4 Datasheet |
| In Stock | 4,681 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 40 |
| Configuration: | SEPARATE, 2 ELEMENTS |
| Transistor Element Material: | GALLIUM NITRIDE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | AMPLIFIER |
| Surface Mount: | YES |
| No. of Terminals: | 6 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-N6 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Operating Mode: | DEPLETION MODE |
| Highest Frequency Band: | S BAND |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | SOURCE |
| Moisture Sensitivity Level (MSL): | 3 |
| Minimum Power Gain (Gp): | 12 dB |
| Other Names: |
935432674528 568-A5G37H110NT4TR |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 125 V |
| Peak Reflow Temperature (C): | 260 |









