NXP Semiconductors - A5M36TG140-TCT1

  1. Home
  2. NXP Semiconductors - A5M36TG140-TCT1
A5M36TG140-TCT1 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number A5M36TG140-TCT1
Description NARROW BAND HIGH POWER;
Datasheet A5M36TG140-TCT1 Datasheet
In Stock467
NAME DESCRIPTION
RF or Microwave Device Type: NARROW BAND HIGH POWER
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
467 $61.250 $28,603.750

Popular Products

Category Top Products

QPA1003P by Qorvo

QPA1003P

Qorvo

Qorvo's QPA1003P is a GAN RF amplifier with 31.4 dB gain, operating from 1-8 GHz. It handles up to 18 dBm CW input power, VSWR of 3, and requires 28V supply. Ideal for wideband high-power applications in RF & microwave systems.
HMC5879LS7 by Hittite Microwave

HMC5879LS7

Hittite Microwave

WIDE BAND HIGH POWER;
HMC797APM5E by Analog Devices

HMC797APM5E

Analog Devices

HMC797APM5E by Analog Devices is a wide band medium power RF amplifier with 13 dB gain and 27 dBm max input power. With a VSWR of 7, it operates from 0 to 22000 MHz, making it ideal for high-frequency applications in RF and microwave systems. The component has a temperature range of -40 to 85°C and features nickel palladium gold terminal finish.
CMD245C4 by Qorvo

CMD245C4

Qorvo

Qorvo's CMD245C4 is a wide band low power RF amplifier with 14 dB gain, operating from 6-18 GHz. It can handle up to 17 dBm CW input power and has a temperature range of -55 to +85°C. Ideal for RF & microwave applications requiring high performance in compact designs.
SGA-3563 by Sirenza Microdevices

SGA-3563

Sirenza Microdevices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT;
HMC414MS8GETR by Analog Devices

HMC414MS8GETR

Analog Devices

Analog Devices' HMC414MS8GETR is a RF amplifier with 17 dB gain, operating from 2200-2800 MHz. It can handle up to 17 dBm CW input power and has a characteristic impedance of 50 ohm. Ideal for narrowband medium power applications in temperatures ranging from -40 to 85°C.
HMC499LC4 by Hittite Microwave

HMC499LC4

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Gain: 9 dB;
RF3827TR7 by Qorvo

RF3827TR7

Qorvo

Qorvo's RF3827TR7 is a GAAS wide band medium power amplifier with 20.5 dB gain, operating from 5 MHz to 1500 MHz. It has a max input power of 13 dBm and VSWR of 20, suitable for surface mount applications in RF & microwave systems requiring up to 8V supply voltage.
ADL5535ARKZ-R7 by Analog Devices

ADL5535ARKZ-R7

Analog Devices

ADL5535ARKZ-R7 by Analog Devices is a wide band low power RF amplifier with 14.9 dB gain, operating from 20 MHz to 1000 MHz. It can handle up to 20 dBm CW input power and operates b/w -40°C to 85°C. Ideal for RF and microwave applications requiring high gain and broad frequency coverage.
AG302-86G by Qorvo

AG302-86G

Qorvo

The Qorvo AG302-86G is a GAAS technology RF amplifier with 13.3 dB gain, operating from 0 to 6000 MHz. It has a max input power of 10 dBm and operates on a 5V power supply. Ideal for wideband low-power applications, it features surface mounting and a characteristic impedance of 50 ohms.
HMC1114PM5ETR by Analog Devices

HMC1114PM5ETR

Analog Devices

Analog Devices' HMC1114PM5ETR is a GaN wide band high power RF amplifier with 31 dB gain, operating from 2.7 GHz to 3.8 GHz. It has a max input power of 18 dBm and VSWR of 6, suitable for applications requiring high power amplification in the RF & Microwave field. The component features a surface mount package body material made of plastic/epoxy, with a max supply current of 150 mA at 28V.
XF1001-SC-0G0T by M/a-com Technology Solutions

XF1001-SC-0G0T

M/a-com Technology Solutions

XF1001-SC-0G0T by M/a-com Technology Solutions is a wide band medium power RF amplifier with 10.1 dB gain and max input power of 24 dBm. It operates in the frequency range of 0-6000 MHz, making it suitable for various RF and microwave applications requiring high performance amplification in temperatures ranging from -40 to 85°C.
HMC478ST89ETR by Hittite Microwave

HMC478ST89ETR

Hittite Microwave

WIDE BAND LOW POWER; Gain: 11 dB; JESD-609 Code: e3; Minimum Operating Frequency: 0 MHz; Terminal Finish: Matte Tin (Sn); Maximum Operating Frequency: 4000 MHz;
RA07N4047M-501 by Mitsubishi Electric

RA07N4047M-501

Mitsubishi Electric

NARROW BAND HIGH POWER;
TGA4521 by Qorvo

TGA4521

Qorvo

Qorvo's TGA4521 is a GaAs RF amplifier with 16dB gain, operating from 32-45 GHz. It handles up to 20 dBm CW input power and requires a 6V supply. Ideal for wideband medium-power applications in RF and microwave systems.
CMPA0060002F by Wolfspeed

CMPA0060002F

Wolfspeed

Wolfspeed's CMPA0060002F is a wide band high power RF module with 13.5 dB gain, operating from 20 MHz to 6 GHz. It has a VSWR of 5 and operates b/w -40°C to 150°C. Ideal for RF & microwave applications requiring high power amplification in a compact form factor.
MWA330 by Motorola

MWA330

Motorola

The Motorola MWA330 is a RF & Microwave Amplifier with max input power of 20 dBm and VSWR of 3. It operates in wide band low power applications from 0.1 MHz to 1000 MHz, making it ideal for various hybrid technology modules. With a metal package body, it can withstand temperatures from -25°C to 80°C.
CMPA801B030S by Wolfspeed

CMPA801B030S

Wolfspeed

WIDE BAND HIGH POWER;
HMC1087 by Analog Devices

HMC1087

Analog Devices

HMC1087 by Analog Devices is a wide band medium power RF amplifier with 10 dB gain. It operates b/w 2-20 GHz, handles up to 34 dBm CW input power, and has a VSWR of 4. Ideal for RF & microwave applications requiring high performance in temperatures ranging from -40 to 85°C.
HMC532LP4E by Hittite Microwave

HMC532LP4E

Hittite Microwave

WIDE BAND LOW POWER; Terminal Finish: Matte Tin (Sn); Minimum Operating Frequency: 7100 MHz; Minimum Operating Temperature: -40 Cel; Maximum Voltage Standing Wave Ratio: 2; Construction: COMPONENT;