NXP Semiconductors - A5M39TG140T2

  1. Home
  2. NXP Semiconductors - A5M39TG140T2
A5M39TG140T2 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number A5M39TG140T2
Description NARROW BAND HIGH POWER;
Datasheet A5M39TG140T2 Datasheet
In Stock4,240
NAME DESCRIPTION
RF or Microwave Device Type: NARROW BAND HIGH POWER
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
4,240 $48.860 $207,166.400

Popular Products

Category Top Products

XP1039-QJ-0G00 by Mimix Broadband

XP1039-QJ-0G00

Mimix Broadband

WIDE BAND HIGH POWER; Minimum Operating Frequency: 5600 MHz; Minimum Operating Temperature: -40 Cel; Terminal Finish: Matte Tin (Sn); Maximum Input Power (CW): 25 dBm; Maximum Operating Frequency: 7100 MHz;
HMC634LC4TR by Hittite Microwave

HMC634LC4TR

Hittite Microwave

WIDE BAND LOW POWER; Minimum Operating Frequency: 5000 MHz; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 10 dBm; Construction: COMPONENT; Maximum Operating Frequency: 20000 MHz;
CMPA601C025F by Wolfspeed

CMPA601C025F

Wolfspeed

WIDE BAND HIGH POWER;
HMC505LP4TR by Analog Devices

HMC505LP4TR

Analog Devices

Analog Devices' HMC505LP4TR is a RF amplifier with 24 terminals, operating from -40 to 85°C. It has a voltage supply of 3V and uses bipolar technology for narrowband low-power applications. The package body material is plastic/epoxy, suitable for surface mounting.
MGA-72543-TR1G by Agilent Technologies

MGA-72543-TR1G

Agilent Technologies

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 9.2 dB; Terminal Finish: Tin (Sn); Package Equivalence Code: SOT-343R;
VMMK-2503-TR1G by Broadcom

VMMK-2503-TR1G

Broadcom

VMMK-2503-TR1G by Broadcom is a GAAS technology RF amplifier with 12.5 dB gain, operating from 1000 to 12000 MHz. It has a max input power of 20 dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems.
MGA-86576 by Agilent Technologies

MGA-86576

Agilent Technologies

Agilent Technologies' MGA-86576 is a RF & Microwave Amplifier with GaAs technology, 5V power supply, and 22mA max current. It has a metal package for surface mount applications in various electronic devices.
CC2590RGVRG4 by Texas Instruments

CC2590RGVRG4

Texas Instruments

CC2590RGVRG4 by Texas Instruments is a 16-terminal RF amplifier with a gain of 14.1 dB, operating b/w 2400-2483.5 MHz. It has a max input power of 10 dBm and is ideal for narrowband low-power applications in temperatures ranging from -40 to 85°C.
RF3827 by Rf Micro Devices

RF3827

Rf Micro Devices

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 8;
HMC506LP4TR by Analog Devices

HMC506LP4TR

Analog Devices

NARROW BAND LOW POWER;
BGA2003T/R by NXP Semiconductors

BGA2003T/R

NXP Semiconductors

NXP Semiconductors' BGA2003T/R is a wide band low power RF amplifier with 16 dB gain, operating from 900 MHz to 1800 MHz. Ideal for RF applications requiring a 50 ohm impedance, this component offers high performance in amplifying signals within the specified frequency range.
CHA3666-QAG by United Monolithic Semiconductor Sas

CHA3666-QAG

United Monolithic Semiconductor Sas

CHA3666-QAG by United Monolithic is a wide band low power RF amplifier with 19 dB gain. It operates b/w 5800-17000 MHz, handling up to 10 dBm CW input power. Ideal for RF applications, it can withstand temperatures from -40°C to 85°C.
AG302-86G by Triquint Semiconductor

AG302-86G

Triquint Semiconductor

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;
HMC863ALC4TR-R5 by Analog Devices

HMC863ALC4TR-R5

Analog Devices

Analog Devices' HMC863ALC4TR-R5 is a wide band medium power RF amplifier with 20.5 dB gain, operating from 24-29.5 GHz. It can handle up to 26 dBm CW input power and has a VSWR of 7. Ideal for RF & microwave applications requiring high performance in temperatures ranging from -40 to 85°C.
SGL-0363Z by Sirenza Microdevices

SGL-0363Z

Sirenza Microdevices

Sirenza Microdevices' SGL-0363Z is a wide band low power RF amplifier with 17 dB gain and 50 ohm impedance. It operates from 5 MHz to 2000 MHz, handling up to 18 dBm CW input power. Ideal for applications requiring high frequency amplification in RF & microwave systems.
CMPA2735075F1 by Wolfspeed

CMPA2735075F1

Wolfspeed

NARROW BAND HIGH POWER;
EMM5077VU by Sumitomo Electric Industries

EMM5077VU

Sumitomo Electric Industries

Sumitomo Electric Industries' EMM5077VU is a wide band medium power RF amplifier with 21 dB gain and 26 dBm CW input power. Operating from -40 to 85 °C, it covers frequencies from 3400 to 5000 MHz. Ideal for RF applications requiring high performance in a compact form factor.
CMD311P34 by Qorvo

CMD311P34

Qorvo

WIDE BAND LOW POWER;
HMC516LC5 by Hittite Microwave

HMC516LC5

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: CERAMIC; Technology: GAAS; Minimum Operating Temperature: -40 Cel;
AC1226 by Teledyne Cougar

AC1226

Teledyne Cougar

RF/Microwave Amplifiers; No. of Terminals: 4; Package Body Material: METAL; Minimum Operating Temperature: -55 Cel; Maximum Supply Current: 79 mA; Package Equivalence Code: CAN4,.3;