NXP Semiconductors - AFV121KGSR5

AFV121KGSR5 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number AFV121KGSR5
Description N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 112 V; Maximum Time At Peak Reflow Temperature (s): 40; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
In Stock4,982
NAME DESCRIPTION
Minimum Power Gain (Gp): 18.5 dB
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: COMMON SOURCE, 2 ELEMENTS
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Feedback Capacitance (Crss): 2.5 pF
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Minimum Operating Temperature: -40 Cel
No. of Terminals: 4
Minimum DS Breakdown Voltage: 112 V
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-CDFM-G4
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: L BAND
Maximum Operating Temperature: 225 Cel
Case Connection: SOURCE
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
4,982 $591.630 $2,947,500.660

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