NXP Semiconductors - BA231

  1. Home
  2. NXP Semiconductors - BA231
BA231 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BA231
Description MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Datasheet BA231 Datasheet
In Stock43
NAME DESCRIPTION
Package Body Material: GLASS
Maximum Forward Voltage (VF): .42 V
Config: SINGLE
Diode Type: MIXER DIODE
Maximum Output Current: .2 A
Maximum Repetitive Peak Reverse Voltage: 50 V
JEDEC-95 Code: DO-35
Sub-Category: Rectifier Diodes
Surface Mount: NO
Diode Element Material: SILICON
No. of Terminals: 2
Qualification: Not Qualified
Terminal Position: AXIAL
Maximum Diode Capacitance: 1.2 pF
Package Style (Meter): LONG FORM
JESD-30 Code: O-LALF-W2
No. of Elements: 1
Package Shape: ROUND
Terminal Form: WIRE
Case Connection: ISOLATED
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
43 - -

Popular Products

Category Top Products

934056928115 by NXP Semiconductors

934056928115

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BA481113 by NXP Semiconductors

BA481113

NXP Semiconductors

MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
MBD701G by Onsemi

MBD701G

Onsemi

MBD701G by Onsemi is a single Schottky mixer diode with ultra high frequency range. It has a max diode capacitance of 1 pF and can operate at temperatures up to 125 °C. This cylindrical package diode is ideal for microwave applications requiring high power dissipation.
1PS88SB82,165 by NXP Semiconductors

1PS88SB82,165

NXP Semiconductors

1PS88SB82,165 by NXP Semiconductors is a Schottky mixer diode with 3 elements and ultra-high frequency band. It operates b/w -65 to 125 °C and has a max reverse current of 0.2 uA. This microwave diode is suitable for applications requiring high-frequency signal mixing in electronic circuits.
BAS16 by Panasonic

BAS16

Panasonic

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BAR19-B2 by STMicroelectronics

BAR19-B2

STMicroelectronics

STMicroelectronics' BAR19-B2 is a single-config microwave mixer diode with ultra-high frequency band. Featuring 1 pF diode capacitance and 0.25 uA reverse current, it operates at up to 125 °C. Ideal for applications requiring high-speed signal mixing in electronic circuits.
BAT1705E6327HTSA1 by Infineon Technologies

BAT1705E6327HTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
NSVMMBD354LT1G by Onsemi

NSVMMBD354LT1G

Onsemi

NSVMMBD354LT1G by Onsemi is a surface mount microwave mixer & detector diode with max operating temperature of 150 °C. It features matte tin terminal finish, silicon diode element material, and peak reflow temperature of 260°C. Ideal for applications requiring high frequency signal mixing and detection in electronic circuits.
BAT17-06E6433 by Infineon Technologies

BAT17-06E6433

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BAT45-B2 by STMicroelectronics

BAT45-B2

STMicroelectronics

BAT45-B2 by STMicroelectronics is a single Schottky mixer diode with 1.1 pF capacitance and 0.1 uA reverse current, ideal for ultra high frequency applications. With a max forward voltage of 1V and output current of 30A, it operates at temperatures up to 125 °C in an isolated round glass package.
BAT15-093P by Infineon Technologies

BAT15-093P

Infineon Technologies

MIXER DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
SMS3923-040LF by Skyworks Solutions

SMS3923-040LF

Skyworks Solutions

SMS3923-040LF by Skyworks Solutions is a single microwave mixer diode with a frequency band from S to C band. It has a max operating frequency of 6000 GHz and operates in temperatures ranging from -65°C to 150°C. This chip carrier package diode is ideal for applications requiring high-frequency mixing and detection capabilities.
BAT68-06W by Infineon Technologies

BAT68-06W

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
MMSD701T1 by Onsemi

MMSD701T1

Onsemi

MMSD701T1 by Onsemi is a single Schottky mixer diode with a max forward voltage of 1V. It operates in the very high frequency to ultra high frequency band, suitable for microwave applications. This surface-mount diode has a max power dissipation of 0.225W and can handle up to 70V repetitive peak reverse voltage.
BAT62-09S by Infineon Technologies

BAT62-09S

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR;
BAT15-03WE6327 by Infineon Technologies

BAT15-03WE6327

Infineon Technologies

BAT15-03WE6327 by Infineon: Schottky mixer diode for X Band applications. Features low barrier Schottky technology with 0.35 pF capacitance. Operates from -55 to 150 °C, with 0.1 W power dissipation and 4 V breakdown voltage.
BAT17-04WE6327 by Infineon Technologies

BAT17-04WE6327

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
HSMS-2852-TR1 by Agilent Technologies

HSMS-2852-TR1

Agilent Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
MMBD352LT3G by Onsemi

MMBD352LT3G

Onsemi

MMBD352LT3G by Onsemi is a microwave mixer & detector diode with 2 elements, ultra high frequency band, and 1 pF diode capacitance. It is ideal for applications requiring small outline packages, such as RF mixers and detectors in high-frequency circuits. Operating at up to 150 °C, it offers series connected configuration with center tap and matte tin terminal finish.
BA683 by NXP Semiconductors

BA683

NXP Semiconductors

MIXER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;