NXP Semiconductors - BA792,115

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT45-AZ1 by STMicroelectronics is a single Schottky mixer diode with 1.1 pF capacitance and 0.1 uA reverse current. Ideal for ultra high frequency applications, it has a max forward voltage of 1V and can handle up to 30A output current at an operating temperature of 125 °C.

MMBD452LT3 by Onsemi is a microwave mixer & detector diode with 2 elements in series connected configuration. It operates in very high frequency to ultra high frequency bands, featuring a max diode capacitance of 1.5 pF. This Schottky technology diode is ideal for applications requiring small outline surface mount packages and dual terminal positions.

MIXER DIODE; Terminal Position: UPPER; Terminal Form: NO LEAD; No. of Terminals: 3; Surface Mount: YES; Package Shape: SQUARE;

STMicroelectronics BAT19-ARX is a single-config microwave mixer diode with 1.2 pF capacitance and 0.1 uA reverse current. Ideal for ultra high frequency applications, it has a max forward voltage of 1 V and can handle up to 30 A output current at 125 °C operating temperature.

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

NSVMMBD352WT1G by Onsemi is a Schottky mixer diode with matte tin finish. It operates at max temp of 150°C, peak reflow temp of 260°C, and can withstand 30s at peak reflow temp. Ideal for microwave applications due to its surface mount capability.

Infineon's BAT15-02LRH-E6327 is a Schottky mixer diode with 0.35 pF capacitance, 0.41 V forward voltage, and 150 °C max temp. Ideal for X Band applications, it's a single-config chip carrier diode suitable for microwave mixing & detection. With low barrier Schottky technology, it operates from -55 to 150 °C with 4V breakdown voltage.

MMBD330T1 by Onsemi is a single Schottky mixer diode with a max forward voltage of 0.6V and a repetitive peak reverse voltage of 30V. It operates in the very high frequency to ultra high frequency band, making it suitable for microwave applications requiring small outline packages and surface mount capabilities.

BAT45-AR1 by STMicroelectronics is a single Schottky mixer diode with 1.1 pF capacitance and 0.1 uA reverse current. Ideal for ultra high frequency applications, it has a max forward voltage of 1 V and can handle up to 30 A output current at an operating temperature of 125 °C.

The Panasonic DB2J20100L is a single mixer diode with ultra high frequency band, suitable for surface mount applications. With a max forward voltage of 0.4V and operating temperature range from -40 to 85°C, it offers reliable performance in various microwave circuits. The diode's small outline package and dual terminal position make it ideal for compact electronic devices.

Broadcom's HSMS-2860-TR1G is a Schottky mixer diode with a frequency range of 0.915 GHz to 5.8 GHz, ideal for C band applications. It features a small outline package with nickel palladium gold finish and can operate in temperatures ranging from -65°C to 150°C. The diode has a max power dissipation of 0.25 W and low diode capacitance of 0.35 pF, making it suitable for microwave mixing and detection tasks in various electronic systems.

BAT19-AR1 by STMicroelectronics is a single-config microwave mixer diode with 1.2 pF capacitance and 0.1 uA reverse current. Ideal for ultra high frequency applications, it operates at up to 125 °C with a breakdown voltage of 10 V, featuring Schottky technology and wire terminals.

TMM6263 by STMicroelectronics is a single microwave mixer diode with a Schottky technology. It operates in the very high frequency to ultra high frequency band, with a max forward voltage of 0.41V and max repetitive peak reverse voltage of 60V. This glass-packaged diode is suitable for applications requiring high-frequency signal mixing and detection.

BAT45-AZ2 by STMicroelectronics is a single mixer diode with ultra high frequency band. It features 1.1 pF diode capacitance, 0.1 uA reverse current, and 7 dB noise figure. Ideal for microwave applications due to its Schottky technology and max operating temperature of 125 °C.

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: SQUARE;

MIXER DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

BA591,135 by NXP Semiconductors is a surface-mount variable capacitance diode ideal for microwave applications. It features a nominal diode capacitance of 0.8 pF and can withstand a peak reverse voltage of 35 V. With a peak reflow temp of 260 °C, it's perfect for compact designs.

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;