NXP Semiconductors - BAP65LXT/R

BAP65LXT/R by NXP Semiconductors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	BAP65LXT/R
Description	PIN DIODE; Surface Mount: YES; Diode Resistive Test Current: 5 mA; Minimum Breakdown Voltage: 30 V; Nominal Minority Carrier Lifetime: .18 us; Nominal Diode Capacitance: .37 pF;
Datasheet	BAP65LXT/R Datasheet
In Stock	2,386

BAP65LXT/R Technical Details

NAME	DESCRIPTION
Diode Resistive Test Frequency:	100 MHz
Nominal Minority Carrier Lifetime:	.18 us
Reverse Test Voltage:	20 V
Diode Type:	PIN DIODE
Minimum Breakdown Voltage:	30 V
Diode Resistive Test Current:	5 mA
Maximum Operating Temperature:	150 Cel
Maximum Diode Forward Resistance:	.95 ohm
Sub-Category:	PIN Diodes
Surface Mount:	YES
Nominal Diode Capacitance:	.37 pF

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,386	-	-

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