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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | BAP70AM |
| Description | PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR; |
| Datasheet | BAP70AM Datasheet |
| In Stock | 4,074 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Maximum Forward Voltage (VF): | 1.1 V |
| Config: | 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
| Diode Type: | PIN DIODE |
| Sub-Category: | Other Diodes |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| Maximum Reverse Current: | .1 uA |
| No. of Terminals: | 6 |
| Terminal Position: | DUAL |
| Maximum Diode Capacitance: | .25 pF |
| Package Style (Meter): | SMALL OUTLINE |
| Technology: | POSITIVE-INTRINSIC-NEGATIVE |
| JESD-30 Code: | R-PDSO-G6 |
| No. of Elements: | 4 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Diode Forward Resistance: | 1.9 ohm |
| Nominal Minority Carrier Lifetime: | 1.25 us |
| Reverse Test Voltage: | 50 V |
| Maximum Repetitive Peak Reverse Voltage: | 50 V |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -65 Cel |
| Diode Element Material: | SILICON |
| Qualification: | Not Qualified |
| Maximum Power Dissipation: | .3 W |
| Additional Features: | LOW DISTORTION |
| Peak Reflow Temperature (C): | 260 |
| Application: | ATTENUATOR |
