Image shown is a representation only.
| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | BAS216T/R |
| Description | RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR; |
| Datasheet | BAS216T/R Datasheet |
| In Stock | 1,405 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | CERAMIC, METAL-SEALED COFIRED |
| Maximum Forward Voltage (VF): | 1.25 V |
| Config: | SINGLE |
| Diode Type: | RECTIFIER DIODE |
| Maximum Output Current: | .25 A |
| Sub-Category: | Rectifier Diodes |
| Surface Mount: | YES |
| Terminal Finish: | TIN/COPPER (SN/CU) |
| Maximum Reverse Current: | 1 uA |
| No. of Terminals: | 2 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-CDSO-R2 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | WRAP AROUND |
| Maximum Operating Temperature: | 150 Cel |
| No. of Phases: | 1 |
| Maximum Repetitive Peak Reverse Voltage: | 85 V |
| JESD-609 Code: | e2 |
| Maximum Non Repetitive Peak Forward Current: | 4 A |
| Diode Element Material: | SILICON |
| Qualification: | Not Qualified |
| Maximum Power Dissipation: | .4 W |
| Peak Reflow Temperature (C): | 260 |
| Maximum Reverse Recovery Time: | .004 us |
